Large-area P–N heterojunction organic semiconductor nanowire combined (4-hexyloxybenzoyl)butylsaure methyl amide (H-t-B) and Poly (3-hexylthiophene) (P3HT) were fabricated and the morphology and photoelectric properties were investigated by the growth of composition. The performance of light on/off switching of the H-t-B/P3HT heterojunction nanowire arrays was measured by the light irradiation on and off, the current in the devices showed two distinct states, the current was only 0.34 μA in the dark, while the current can reach 1.37 μA under the illumination of 45 mW/cm². The on/off switching ratio for the device of the heterojunction nanowire arrays is about 4.03.

中文翻译：

---

（4-己氧基苯甲酰基）丁基脲甲基/聚（3-己基噻吩）异质结纳米线阵列的合成

大面积的P-N异质结有机半导体纳米线结合（4-己氧基苯甲酰基）butylsaure甲基酰胺（H-吨-B）和聚（3-己基噻吩）（P3HT）被制造和形态和光电特性通过的生长研究作品。H- t -B / P3HT异质结纳米线阵列的光开/关切换性能通过光的开和关来测量，器件中的电流显示出两种不同的状态，在黑暗中电流仅为0.34μA，在45 mW / cm ²的光照下电流可以达到1.37μA 。异质结纳米线阵列的器件的开/关切换比约为4.03。