<br>洞察In2O3:H薄膜的高迁移率和稳定性,Small

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洞察In2O3:H薄膜的高迁移率和稳定性
Small ( IF 13.0 ) Pub Date : 2023-09-05 , DOI: 10.1002/smll.202304721
Ciyu Ge ₁ , Zunyu Liu ₁ , Yongchen Zhu ₁ , Yilong Zhou ₁ , Borui Jiang ₁ , Jiaxing Zhu ₁ , Xuke Yang ₁ , Yongxin Zhu ₁ , Shuyu Yan ₁ , Haojun Hu ₁ , Haisheng Song ₁ , Luying Li ₁ , Chao Chen _{1,

2} , Jiang Tang _{1,

2}

Affiliation

宽带隙半导体，特别是In ₂ O ₃ :Sn (ITO)，广泛用作光电器件中的透明导电电极。然而，由于高浓度氧空位(V _O )缺陷的散射概率，ITO的迁移率始终低于40 cm ² V ^-1 s ^-1 。最近，氢掺杂的In ₂ O ₃ (In ₂ O ₃ :H)薄膜已被证明具有高迁移率(>100 cm ² V ^-1 s ^-1 )，但这种高迁移率的起源仍不清楚。在此，采用高分辨率电子显微镜和理论计算来研究In ₂ O ₃ :H薄膜中高载流子迁移率背后的原子尺度机制。研究发现V _O会引起强烈的晶格畸变和大的载流子散射概率，导致载流子迁移率低。此外，氢掺杂可以同时降低_V2O的浓度，从而实现高载流子迁移率。研究了In ₂ O ₃ :H薄膜的热稳定性和酸碱腐蚀机理，发现在高温（>250℃）下氢气会从薄膜中溢出，而酸性或碱性环境会对In _{2 O 3} :H薄膜造成损害。 O ₃谷物本身。总的来说，这项工作提供了对In ₂ O ₃ :H中高载流子迁移率的根本原因的见解，并为透明导电氧化物的掺杂和稳定机制提供了一种新的研究方法。

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Insight into the High Mobility and Stability of In2O3:H Film

Wide bandgap semiconductors, particularly In₂O₃:Sn (ITO), are widely used as transparent conductive electrodes in optoelectronic devices. Nevertheless, due to the strohave beenng scattering probability of high-concentration oxygen vacancy (V_O) defects, the mobility of ITO is always lower than 40 cm² V⁻¹ s⁻¹. Recently, hydrogen-doped In₂O₃ (In₂O₃:H) films have been proven to have high mobility (>100 cm² V⁻¹ s⁻¹), but the origin of this high mobility is still unclear. Herein, a high-resolution electron microscope and theoretical calculations are employed to investigate the atomic-scale mechanisms behind the high carrier mobility in In₂O₃:H films. It is found that V_O can cause strong lattice distortion and large carrier scattering probability, resulting in low carrier mobility. Furthermore, hydrogen doping can simultaneously reduce the concentration of V_O, which accounts for high carrier mobility. The thermal stability and acid–base corrosion mechanism of the In₂O₃:H film are investigated and found that hydrogen overflows from the film at high temperatures (>250 °C), while acidic or alkaline environments can cause damage to the In₂O₃ grains themselves. Overall, this work provides insights into the essential reasons for high carrier mobility in In₂O₃:H and presents a new research approach to the doping and stability mechanisms of transparent conductive oxides.

更新日期：2023-09-05

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