We present a detailed investigation on the impact of thermal annealing on the third-order nonlinear optical (NLO) properties of sputtered $WS{e}_2$ thin films. The process of annealing results in an appreciable change in morphology and texture of $WS{e}_2$ films that is governed by the annealing temperature and duration of annealing. These modifications are apparent from the electron micrographs as well as X-ray diffraction and Raman spectrum. The visible absorption spectroscopy point towards a gradual shrinkage of electronic bandgap which motivated us to explore the impact of NLO properties of the annealed $WS{e}_2$ films. The NLO measurements were carried out using a single-beam Z-scan technique using ultrashort pulses centered at 1030 nm excitation wavelength. The investigations reveal a distinct two-photon absorption (TPA) signature for the annealed $WS{e}_2$ films along with a self-focusing effect. The observations indicate the strengthening of optical limiting behavior exhibited by $WS{e}_2$ films when they are annealed for a longer duration. The outcomes suggest that the process of annealing in $WS{e}_2$ films allows controlling the NLO properties and renders them more suitable candidates as optical limiters for high-power applications.