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Highly Quantum Efficient and Thermally Stable Near-Infrared-Emitting K-β-Al2O3:Cr3+ Phosphor
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2023-08-31 , DOI: 10.1002/adom.202301579 Chao Dou 1 , Chuxin Cai 1 , Zhen Song 1 , Quanlin Liu 1
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2023-08-31 , DOI: 10.1002/adom.202301579 Chao Dou 1 , Chuxin Cai 1 , Zhen Song 1 , Quanlin Liu 1
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Near-infrared (NIR) phosphors are enablers for NIR phosphor-converted light-emitting diodes (pc-LEDs). However, fewer NIR-emitting phosphors with both high internal/external quantum efficiency (IQE/EQE) and thermal stability are discovered, which obstructs the promotion of NIR pc-LEDs. Herein, by partially replacing Al3+ in K-β-Al2O3:2Cr3+ with Ga3+, the photoluminescence (PL) intensity of the solid solution K1+δ(Al0.4Ga0.6)11O17:2Cr3+, (KA0.4G0.6O:Cr) phosphor is increased 2.75 and 1.25 times that of end-members K1+δAl11O17:2Cr3+ (KAO:Cr) and K1+δGa11O17:2Cr3+ (KGO:Cr). The IQE/EQE of optimal KA0.4G0.6O:Cr reaches 88.9%/50.8% with high thermal stability (77.4%@150 °C). The PL intensity enhancement is due to the Al/Ga-6O octahedral volume and distortion variation caused by the substitution of Ga3+ for Al3+ in K1+δ(Al1-y,Gay)11O17:2Cr3+ (KA1-yGyO:Cr), which leads to the forbidden d–d transition being broken and crystal field strength varied. Finally, a NIR pc-LED device fabricated based on KA0.4G0.6O:Cr NIR-emitting phosphor and blue chip reaches an electro-optical efficiency of 16.3% under a drive current of 100 mA. Meanwhile, non-destructive detection and plant germination applications of the NIR pc-LED are demonstrated. These results prove that KA0.4G0.6O:Cr is a promising NIR phosphor for diverse applications.
中文翻译：
高量子效率和热稳定性近红外发射 K-β-Al2O3:Cr3+ 荧光粉
近红外 (NIR) 荧光粉是 NIR 荧光粉转换发光二极管 (pc-LED) 的推动者。然而，同时具有高内/外量子效率（IQE/EQE）和热稳定性的近红外荧光粉的发现较少，这阻碍了近红外pc-LED的推广。这里，通过用Ga 3+部分替换K-β-Al 2 O 3 :2Cr 3+中的Al 3+，固溶体K 1+δ (Al 0.4 Ga 0.6 ) 11 O 17的光致发光(PL)强度： 2Cr 3+ , (KA 0.4 G 0.6 O:Cr)磷光体比端元K 1+δ Al 11 O 17 :2Cr 3+ (KAO:Cr)和K 1+δ Ga 11 O提高了2.75和1.25倍17：2Cr 3+ (KGO:Cr)。最佳KA 0.4 G 0.6 O:Cr的IQE/EQE达到88.9%/50.8%，具有较高的热稳定性(77.4%@150 °C)。 PL强度的增强是由于K 1+δ (Al 1-y ,Ga y ) 11 O 17 :2Cr 3中Ga 3+取代Al 3+引起的Al/Ga-6O八面体体积和畸变变化所致+ (KA 1-y G y O:Cr)，这导致禁止的d-d跃迁被破坏并且晶体场强度发生变化。最后，基于KA 0.4 G 0.6 O:Cr近红外发射荧光粉和蓝光芯片制造的近红外pc-LED器件在100 mA的驱动电流下达到了16.3%的电光效率。同时，还展示了近红外pc-LED的无损检测和植物发芽应用。这些结果证明 KA 0.4 G 0.6 O:Cr 是一种有前景的近红外荧光粉，适合多种应用。
更新日期：2023-08-31
中文翻译：
高量子效率和热稳定性近红外发射 K-β-Al2O3:Cr3+ 荧光粉
近红外 (NIR) 荧光粉是 NIR 荧光粉转换发光二极管 (pc-LED) 的推动者。然而，同时具有高内/外量子效率（IQE/EQE）和热稳定性的近红外荧光粉的发现较少，这阻碍了近红外pc-LED的推广。这里，通过用Ga 3+部分替换K-β-Al 2 O 3 :2Cr 3+中的Al 3+，固溶体K 1+δ (Al 0.4 Ga 0.6 ) 11 O 17的光致发光(PL)强度： 2Cr 3+ , (KA 0.4 G 0.6 O:Cr)磷光体比端元K 1+δ Al 11 O 17 :2Cr 3+ (KAO:Cr)和K 1+δ Ga 11 O提高了2.75和1.25倍17：2Cr 3+ (KGO:Cr)。最佳KA 0.4 G 0.6 O:Cr的IQE/EQE达到88.9%/50.8%，具有较高的热稳定性(77.4%@150 °C)。 PL强度的增强是由于K 1+δ (Al 1-y ,Ga y ) 11 O 17 :2Cr 3中Ga 3+取代Al 3+引起的Al/Ga-6O八面体体积和畸变变化所致+ (KA 1-y G y O:Cr)，这导致禁止的d-d跃迁被破坏并且晶体场强度发生变化。最后，基于KA 0.4 G 0.6 O:Cr近红外发射荧光粉和蓝光芯片制造的近红外pc-LED器件在100 mA的驱动电流下达到了16.3%的电光效率。同时，还展示了近红外pc-LED的无损检测和植物发芽应用。这些结果证明 KA 0.4 G 0.6 O:Cr 是一种有前景的近红外荧光粉，适合多种应用。
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