A new straightforward synthesis of isomerically pure anthra[2,3-b:6,7-b′] -difuran (anti-ADF), -dithiophene (anti-ADT), and -diselenophene (anti-ADS) from readily available 2,6-dimethoxyanthracene is described. The present successful synthesis makes it possible to overview the linear-shaped anti-acenedichalcogenophene compounds, that is, benzo[1,2-b:4,5-b′]-, naphtho[2,3-b:6,7-b′]-, and anthra[2,3-b:6,7-b′]- difuran, -dithiophene, and -diselenophene. By comparing their electrochemical and photochemical properties, the electronic structures of acenedichalcogenophenes can be expressed as the outcome of balance between the central acene core and the outermost chalcogenophene rings. Among isomerically pure parent anti-anthradichalcogenophenes, anti-ADT and anti-ADS can afford crystalline thin films by vapor deposition, which acted as active layer in organic field-effect transistors with mobility as high as 0.3 cm² V^–1 s^–1 for ADT and 0.7 cm² V^–1 s^–1 for ADS. The mobility of isomerically pure anti-ADT is higher by several times than those reported for isomercally mixed ADT, implying that the isomeric purity could be beneficial for realizing the better FET mobility. We also tested the diphenyl derivatives of anti-ADF, -ADT, and -ADS as the active material for OFET devices, which showed high mobility of up to 1.3 cm² V^–1 s^–1.

中文翻译：

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异构纯蒽[2,3- b：6,7- b ']-二呋喃（抗-ADF），-二噻吩（抗-ADT）和-二苯并菲林（抗-ADS）：选择性合成，电子结构和应用到有机场效应晶体管

并[2,3-异构纯蒽的新合成直截了当b：6,7- b '] -difuran（抗-ADF），二噻吩（抗-ADT），和-diselenophene（抗由容易获得的2 -ADS）描述了，6-二甲氧基蒽。目前成功的合成使得可以概述线性抗乙酰苯丙二烯化合物，即苯并[1,2- b：4,5- b ']-，萘并[2,3- b：6,7- b ']-和anthra [2,3- b：6,7- b′]-二呋喃，-二噻吩和-二硒苯。通过比较它们的电化学和光化学性质，可以将a烯二碳三烯的电子结构表示为中心并苯芯和最外的硫属二碳烯环之间平衡的结果。在异构纯的母体抗蒽硫属元素化合物中，抗-ADT和抗-ADS可以通过气相沉积提供结晶薄膜，这些薄膜可作为有机场效应晶体管的有源层，其迁移率高达0.3 cm ² V ^–1 s ^–1。ADS和ADS的0.7 cm ² V ^–1 s ^–1。异构纯的流动性反-ADT比异构混合ADT报道的高出几倍，这表明异构体纯度可能有利于实现更好的FET迁移率。我们还测试了抗-ADF，-ADT和-ADS的二苯衍生物作为OFET装置的活性材料，它们显示出高达1.3 cm ² V ^–1 s ^–1的高迁移率。