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Ultra-Steep-Slope and High-Stability of CuInP2S6/WS2 Ferroelectric Negative Capacitor Transistors by Passivation Effect and Dual-Gate Modulation
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2023-08-28 , DOI: 10.1002/adfm.202306708 Lei Zhao 1 , Yunshan Liang 2 , Jingyi Ma 1 , Zhidong Pan 1 , Xueting Liu 1 , Mengmeng Yang 1 , Yiming Sun 1 , Wei Gao 1 , Bo Li 3 , Jingbo Li 1, 4, 5 , Nengjie Huo 1, 4
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2023-08-28 , DOI: 10.1002/adfm.202306708 Lei Zhao 1 , Yunshan Liang 2 , Jingyi Ma 1 , Zhidong Pan 1 , Xueting Liu 1 , Mengmeng Yang 1 , Yiming Sun 1 , Wei Gao 1 , Bo Li 3 , Jingbo Li 1, 4, 5 , Nengjie Huo 1, 4
Affiliation
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Ferroelectric negative capacitance transistors (Fe-NCFETs) have emerged as a promising technology for low-power electronics and have the potential to continue Moore's law. However, the existing 2D ferroelectric materials are predominantly sulfides or halides, which are susceptible to oxidation or hydrolysis, thereby hindering their commercial production due to concerns related to performance and stability. To address these obstacles, the authors have optimized the Fe-NCFETs composed of 2D ferroelectric CuInP2S6 and semiconductor WS2 using high-k Al2O3 passivation and dual-gate modulation strategy. With atomic layer deposition (ALD) of Al2O3, all-2D Fe-NCFETs, operated at a low driven voltage of 0.3 V, achieve much improvement in stability and performance with a high ON/OFF ratio of 109 and minimum subthreshold swing (SS) of 14 mV dec−1, which is attributed to the negative capacitance effect of CuInP2S6 and passivation effect of ALD-Al2O3. The dual-gate modulation approach is also implemented to maintain the device stability and enable the improved ON/OFF ratio from 105 to 108, minimum SS of 10 mV dec−1, and an average SS of ≈60 mV dec−1 covering more than five orders of magnitude of current. This work provides a facile and effective strategy for designing all-2D Fe-NCFETs with ultra-steep SS and high stability, showing exciting potential for future low-power electronic applications.
中文翻译：
钝化效应和双栅极调制的 CuInP2S6/WS2 铁电负电容晶体管的超陡斜率和高稳定性
铁电负电容晶体管 (Fe-NCFET) 已成为一种有前景的低功耗电子技术，并有可能延续摩尔定律。然而，现有的二维铁电材料主要是硫化物或卤化物，它们容易氧化或水解，因此由于性能和稳定性方面的问题阻碍了其商业化生产。为了解决这些障碍，作者使用高 k Al 2 O 3钝化和双栅极调制策略优化了由二维铁电 CuInP 2 S 6和半导体 WS 2组成的 Fe-NCFET。通过 Al 2 O 3的原子层沉积 (ALD) ，全二维 Fe-NCFET 在 0.3 V 的低驱动电压下工作，通过 10 9 的高开/关比和最小亚阈值，大大提高了稳定性和性能摆幅（SS）为14 mV dec -1，这归因于CuInP 2 S 6的负电容效应和ALD-Al 2 O 3的钝化效应。还采用双栅极调制方法来保持器件稳定性，并将开/关比从 10 5提高到 10 8，最小 SS 为 10 mV dec -1，平均 SS 为 ≈60 mV dec -1覆盖超过五个数量级的电流。这项工作为设计具有超陡SS和高稳定性的全二维Fe-NCFET提供了一种简便有效的策略，显示出未来低功耗电子应用的令人兴奋的潜力。
更新日期：2023-08-28
中文翻译：
钝化效应和双栅极调制的 CuInP2S6/WS2 铁电负电容晶体管的超陡斜率和高稳定性
铁电负电容晶体管 (Fe-NCFET) 已成为一种有前景的低功耗电子技术，并有可能延续摩尔定律。然而，现有的二维铁电材料主要是硫化物或卤化物，它们容易氧化或水解，因此由于性能和稳定性方面的问题阻碍了其商业化生产。为了解决这些障碍，作者使用高 k Al 2 O 3钝化和双栅极调制策略优化了由二维铁电 CuInP 2 S 6和半导体 WS 2组成的 Fe-NCFET。通过 Al 2 O 3的原子层沉积 (ALD) ，全二维 Fe-NCFET 在 0.3 V 的低驱动电压下工作，通过 10 9 的高开/关比和最小亚阈值，大大提高了稳定性和性能摆幅（SS）为14 mV dec -1，这归因于CuInP 2 S 6的负电容效应和ALD-Al 2 O 3的钝化效应。还采用双栅极调制方法来保持器件稳定性，并将开/关比从 10 5提高到 10 8，最小 SS 为 10 mV dec -1，平均 SS 为 ≈60 mV dec -1覆盖超过五个数量级的电流。这项工作为设计具有超陡SS和高稳定性的全二维Fe-NCFET提供了一种简便有效的策略，显示出未来低功耗电子应用的令人兴奋的潜力。
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