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Highly Efficient and Stable Inverted Perovskite Solar Cell Using Pure δ-FAPbI3 Single Crystals
Small ( IF 13.0 ) Pub Date : 2023-08-27 , DOI: 10.1002/smll.202305246 Tarak Nath Mandal 1 , Jin Hyuck Heo 2 , Sang Hyuk Im 2 , Woo-Sik Kim 1
Small ( IF 13.0 ) Pub Date : 2023-08-27 , DOI: 10.1002/smll.202305246 Tarak Nath Mandal 1 , Jin Hyuck Heo 2 , Sang Hyuk Im 2 , Woo-Sik Kim 1
Affiliation
Pure δ-formamidinium lead triiodide (δ-FAPbI3) single crystal for highly efficient perovskite solar cell (PCS) with long-term stability is prepared by a new method consisting of liquid phase reaction of FAI and PbI2 in N,N-dimethyl formamide and antisolvent crystallization using acetonitrile. In this method, the incorporation of any impurity into the crystal is excluded by the molecular recognition of the crystal growth site. This pure crystal is used to fabricate α-FAPbI3 inverted PSCs which showed excellent power conversion efficiency (PCE) due to much-reduced trap-states. The champion device exhibited a high PCE of 23.48% under the 1-Sun condition. Surface-treated devices with 3-(aminomethyl)pyridine showed a significantly improved PCE of 25.07%. In addition, the unencapsulated device maintained 97.22% of its initial efficiency under continuous 1-Sun illumination for 1,000 h at 85 °C in an N2 atmosphere ensuring long-term thermal and photo stabilities of PSCs, whereas the control device kept only 89.93%.
中文翻译:
使用纯δ-FAPbI3单晶的高效稳定倒置钙钛矿太阳能电池
采用FAI与PbI 2在N,N-二甲基中进行液相反应的新方法制备了具有长期稳定性的高效钙钛矿太阳能电池(PCS)纯δ-甲脒三碘化铅(δ-FAPbI 3 )单晶甲酰胺和反溶剂使用乙腈进行结晶。在该方法中,通过晶体生长位点的分子识别来排除任何杂质掺入晶体中。这种纯晶体用于制造 α-FAPbI 3倒置 PSC,由于陷阱态大大减少,因此表现出优异的功率转换效率(PCE)。冠军器件在 1-Sun 条件下表现出 23.48% 的高 PCE。经过 3-(氨基甲基)吡啶表面处理的器件的 PCE 显着提高,达到 25.07%。此外,在85°C、N 2气氛下连续1-Sun照明1,000小时后,未封装的器件保持了97.22%的初始效率,确保了PSC的长期热稳定性和光稳定性,而对照器件仅保持了89.93% 。
更新日期:2023-08-27
中文翻译:
使用纯δ-FAPbI3单晶的高效稳定倒置钙钛矿太阳能电池
采用FAI与PbI 2在N,N-二甲基中进行液相反应的新方法制备了具有长期稳定性的高效钙钛矿太阳能电池(PCS)纯δ-甲脒三碘化铅(δ-FAPbI 3 )单晶甲酰胺和反溶剂使用乙腈进行结晶。在该方法中,通过晶体生长位点的分子识别来排除任何杂质掺入晶体中。这种纯晶体用于制造 α-FAPbI 3倒置 PSC,由于陷阱态大大减少,因此表现出优异的功率转换效率(PCE)。冠军器件在 1-Sun 条件下表现出 23.48% 的高 PCE。经过 3-(氨基甲基)吡啶表面处理的器件的 PCE 显着提高,达到 25.07%。此外,在85°C、N 2气氛下连续1-Sun照明1,000小时后,未封装的器件保持了97.22%的初始效率,确保了PSC的长期热稳定性和光稳定性,而对照器件仅保持了89.93% 。