The newly emerging copper halide Cs₃Cu₂I₅ is a promising candidate for deep-ultraviolet photodetector applications. However, the device performance available today is plagued by massive grain boundaries in Cs₃Cu₂I₅ polycrystalline films and unnecessary thicker volume in bulk single crystals. In this study, for the first time, highly crystalline and stable Cs₃Cu₂I₅ single-crystalline thin films (SCFs) were prepared by facile supersaturation-controlled growth strategy, with adjustable thickness ranging from 45 nm to 27.9 µm. By in situ monitoring the growth process, the crystallization kinetics of Cs₃Cu₂I₅ SCFs were elucidated, and the crystallization driving force comes from the slow inverse temperature nucleation and evaporation crystallization. Moreover, the substrate-independent growth feature of Cs₃Cu₂I₅ SCFs is intriguing for the direct on-chip fabrication of diverse photoelectric devices. The structural and electric characterizations reveal that the Cs₃Cu₂I₅ SCFs have a low trap density of 6.42 × 10¹¹ cm⁻³, and the measured carrier lifetime and diffusion length are as long as 1.32 μs and 1.85 µm, respectively, which enable high deep-ultraviolet light detection capability of the proposed photoconductive detector based on Cs₃Cu₂I₅ SCFs. Encouraged by the robust operating stability of the fabricated device, the above results obtained could catalyze further research on on-chip manufacturing of deep-ultraviolet photodetectors.

新出现的卤化铜Cs ₃ Cu ₂ I ₅是深紫外光电探测器应用的有前途的候选者。然而，目前可用的器件性能受到Cs ₃ Cu ₂ I ₅多晶薄膜中大量晶界和块状单晶中不必要的较厚体积的困扰。在这项研究中，首次通过简单的过饱和控制生长策略制备了高度结晶且稳定的Cs ₃ Cu ₂ I ₅单晶薄膜（SCF），厚度可调范围为45 nm至27.9 µm。通过原地通过监测生长过程，阐明了Cs ₃ Cu ₂ I ₅ SCF的结晶动力学，结晶驱动力来自于缓慢的逆温成核和蒸发结晶。_{此外，Cs 3} Cu ₂ I ₅ SCF的基板独立生长特性对于各种光电器件的直接片上制造来说很有趣。结构和电学表征表明Cs ₃ Cu ₂ I _{5 SCF具有6.42 × 10} ¹¹ cm ^-3的低陷阱密度，测得的载流子寿命和扩散长度分别长达1.32μs和1.85μm，这使得所提出的基于Cs 3 Cu 2 I 5 SCF的光电导探测器_具有高深_紫外光探测_能力。由于所制造的器件具有强大的运行稳定性，上述结果可以催化深紫外光电探测器片上制造的进一步研究。