Achieving Ultra-Broadband Near-Infrared Emission in Cr3+-Activated Cs2NaScCl6 Perovskite for Efficient Phosphor-Converted Light-Emitting Diodes,Advanced Optical Materials

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Achieving Ultra-Broadband Near-Infrared Emission in Cr3+-Activated Cs2NaScCl6 Perovskite for Efficient Phosphor-Converted Light-Emitting Diodes
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2023-08-26 , DOI: 10.1002/adom.202301323
Zhaoyu Wang _{1,

2} , Yameng Chen _{1,

3} , Jianxi Ke _{1,

3} , Youchao Wei _{1,

3} , Yongsheng Liu _{1,

3} , Maochun Hong _{1,

2,

3}

Affiliation

Ultra-broadband near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) have great application prospects in research and industrial fields. However, simultaneously achieving highly efficient and ultra-broad NIR emission in phosphor material remains a challenge. Herein, an ultra-broadband NIR emission in the range of 800–1200 nm with ultra-high emission efficiency of up to 64.2% is first achieved by substituting the Sc³⁺ site in Cs₂NaScCl₆ perovskite single-crystal with a Cr³⁺ ion. By combining the experimental results with first-principles calculations, an efficient charge transfer sensitization process from host to Cr³⁺ is found to be the fundamental reason for the ultra-high NIR emission efficiency. Benefiting from the excellent efficiency and superior chemical resistance to heat and UV radiation, an ultra-broadband NIR pc-LED made of this phosphor demonstrates great potential in biomedical imaging, nondestructive testing, and night-vision devices.

中文翻译：

在 Cr3+ 激活的 Cs2NaScCl6 钙钛矿中实现超宽带近红外发射，用于高效磷光转换发光二极管

超宽带近红外（NIR）荧光粉转换发光二极管（pc-LED）在研究和工业领域具有巨大的应用前景。然而，在荧光粉材料中同时实现高效和超宽近红外发射仍然是一个挑战。^{在此，通过用Cr 3}取代Cs ₂ NaScCl ₆钙钛矿单晶中的Sc ³⁺位点，首次实现了800–1200 nm范围内的超宽带近红外发射，发射效率高达64.2% ⁺离子。通过将实验结果与第一原理计算相结合，发现从主体到Cr ³⁺的高效电荷转移敏化过程是超高近红外发射效率的根本原因。受益于优异的效率以及优异的耐热和紫外线辐射耐化学性，由这种荧光粉制成的超宽带近红外 pc-LED 在生物医学成像、无损检测和夜视设备中展现出巨大的潜力。

更新日期：2023-08-26

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