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Flexible self-powered solar-blind Schottky photodetectors based on individual Ga2O3 microwire/MXene junctions
CrystEngComm ( IF 2.6 ) Pub Date : 2023-08-23 , DOI: 10.1039/d3ce00620d Yang Liu 1 , Yun Wei 2 , Shulin Sha 2 , Zhiming Zhou 1 , Bingwang Yang 2 , Kai Tang 2 , Caixia Kan 2 , Peng Wan 2 , Mingming Jiang 2
CrystEngComm ( IF 2.6 ) Pub Date : 2023-08-23 , DOI: 10.1039/d3ce00620d Yang Liu 1 , Yun Wei 2 , Shulin Sha 2 , Zhiming Zhou 1 , Bingwang Yang 2 , Kai Tang 2 , Caixia Kan 2 , Peng Wan 2 , Mingming Jiang 2
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Solar-blind photodetectors that are exclusively sensitive to deep ultraviolet light have garnered increasing interest due to their numerous applications. In this work, flexible solar-blind Schottky photodetectors made of individual Ga2O3 microwires and MXene on a flexible polyethylene terephthalate substrate are reported. The Ga2O3 microwire/MXene photodetector has an ultralow dark current (10−13–10−12 pA), a responsivity of 0.25 mA W−1 and a detectivity of 4 × 109 Jones under the illumination of 254 nm light with a power intensity of 0.11 mW cm−2 at zero bias. The photodetector also exhibits a fast rise/decay time (162 μs/35.8 ms), which is superior to those of most reported flexible Ga2O3 photodetectors. The favorable photoelectric properties of the Ga2O3 microwire/MXene photodetectors are attributed to the high crystal quality of Ga2O3 microwires and the large Schottky barrier (∼1.34 eV) between the Ga2O3 microwires and MXene. Additionally, without any encapsulation, the photodetectors exhibit exceptional mechanical flexibility as well as long-term environmental stability. The facile and efficient fabrication method of the Ga2O3 microwire/MXene photodetectors makes them ideal for low-cost and flexible solar-blind photodetection.
中文翻译：
基于单个 Ga2O3 微线/MXene 结的灵活自供电日盲肖特基光电探测器
仅对深紫外光敏感的日盲光电探测器由于其广泛的应用而引起了越来越多的兴趣。在这项工作中，报道了在柔性聚对苯二甲酸乙二醇酯基板上由单独的 Ga 2 O 3微线和 MXene 制成的柔性日盲肖特基光电探测器。Ga 2 O 3微线/MXene光电探测器在254 nm光照射下具有超低暗电流（10 −13 –10 −12 pA）、0.25 mA W −1的响应度和4 × 10 9 Jones的探测灵敏度。功率强度为0.11 mW cm -2零偏压时。该光电探测器还表现出快速的上升/衰减时间（162 μs/35.8 ms），优于大多数报道的柔性 Ga 2 O 3光电探测器。Ga 2 O 3微线/MXene光电探测器良好的光电性能归因于Ga 2 O 3微线的高晶体质量以及Ga 2 O 3微线和MXene之间的大肖特基势垒（∼1.34 eV） 。此外，在没有任何封装的情况下，光电探测器表现出卓越的机械灵活性以及长期环境稳定性。Ga 2 O 3简便高效的制备方法microwire/MXene 光电探测器使其成为低成本、灵活的日盲光电探测的理想选择。
更新日期：2023-08-23
中文翻译：
基于单个 Ga2O3 微线/MXene 结的灵活自供电日盲肖特基光电探测器
仅对深紫外光敏感的日盲光电探测器由于其广泛的应用而引起了越来越多的兴趣。在这项工作中，报道了在柔性聚对苯二甲酸乙二醇酯基板上由单独的 Ga 2 O 3微线和 MXene 制成的柔性日盲肖特基光电探测器。Ga 2 O 3微线/MXene光电探测器在254 nm光照射下具有超低暗电流（10 −13 –10 −12 pA）、0.25 mA W −1的响应度和4 × 10 9 Jones的探测灵敏度。功率强度为0.11 mW cm -2零偏压时。该光电探测器还表现出快速的上升/衰减时间（162 μs/35.8 ms），优于大多数报道的柔性 Ga 2 O 3光电探测器。Ga 2 O 3微线/MXene光电探测器良好的光电性能归因于Ga 2 O 3微线的高晶体质量以及Ga 2 O 3微线和MXene之间的大肖特基势垒（∼1.34 eV） 。此外，在没有任何封装的情况下，光电探测器表现出卓越的机械灵活性以及长期环境稳定性。Ga 2 O 3简便高效的制备方法microwire/MXene 光电探测器使其成为低成本、灵活的日盲光电探测的理想选择。
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