Broadband near-infrared (NIR)-emitting materials have critical applications in biology, medical detection, and NIR night-vision. However, developing NIR phosphors with promising optical properties and excellent thermal stability is a great challenge for research. In this work, a novel NIR phosphor Cr³⁺ and Yb³⁺ doped CaSc₂O₄ (CSO) is an evolving NIR emitting phosphor with decent optical properties, boosted emission intensity, and thermal stability that makes it a promising candidate with potential applications in NIR-LED and infrared night-vision. The implications of the fundamental electronic structure of CSO, including valence-band (VB) and conduction-band (CB) orbital character, are investigated. Under blue light excitation, CSO:Cr³⁺ is settled with pure broadband NIR emissions (max = 920 nm, FWHM (full width at half maximum) = ∼310 nm) and good thermal stability. The occupation of two selectable lattice sites of Cr³⁺ in CSO is discussed in detail. Furthermore, emission enhancements of samples are done by Cr³⁺ and Yb³⁺ codoping, effectively broadening FWHM to 351 nm and reducing thermal quenching. The energy transfer (ET) routes in CSO:Cr³⁺,Yb³⁺ are investigated based on PL lifetime and comprehensive kinetic ET model, revealing that the PL enhancements by Cr³⁺ and Yb³⁺ codoping mainly originate from the ET from Cr³⁺ to Yb³⁺ emitters with more efficient and thermally stable. Finally, an InGaN-LED device encapsulated using CSO:0.01Cr³⁺ and CSO:0.01Cr³⁺,0.01 Yb³⁺ phosphor was fabricated. The fabricated NIR pc-LEDs are excellent candidates for NIR light sources in biological imaging and NIR night vision.

宽带近红外 (NIR) 发射材料在生物学、医学检测和近红外夜视领域具有重要应用。然而，开发具有良好光学性能和优异热稳定性的近红外荧光粉对研究来说是一个巨大的挑战。在这项工作中，一种新型近红外荧光粉Cr ³⁺和Yb ³⁺掺杂CaSc ₂ O ₄(CSO) 是一种不断发展的近红外发射荧光粉，具有良好的光学特性、增强的发射强度和热稳定性，使其成为近红外 LED 和红外夜视领域潜在应用的候选者。研究了 CSO 基本电子结构的影响，包括价带 (VB) 和导带 (CB) 轨道特征。在蓝光激发下，CSO:Cr ³⁺具有纯宽带近红外发射（最大值 = 920 nm，FWHM（半峰全宽）= ∼310 nm）和良好的热稳定性。详细讨论了CSO 中Cr ³⁺的两个可选择晶格位置的占据。此外，样品的发射增强是通过 Cr ³⁺和 Yb ^3+完成的共掺杂，有效地将半高宽展宽至 351 nm，并减少热猝灭。基于PL寿命和综合动力学ET模型研究了CSO:Cr ³⁺ ,Yb ³⁺中的能量转移(ET)路径，揭示了Cr ³⁺和Yb ³⁺共掺杂对PL的增强主要来源于Cr的ET ³⁺至 Yb ³⁺发射体具有更高的效率和热稳定性。^{最后，制作了采用CSO:0.01Cr 3+}和CSO:0.01Cr ³⁺ ,0.01 Yb ³⁺荧光粉封装的InGaN-LED器件。所制造的 NIR pc-LED 是生物成像和 NIR 夜视中 NIR 光源的绝佳候选者。