Tin halide perovskites have the general chemical formula ASnX₃, where A is a monovalent cation and X is a monovalent halide anion. These semiconducting materials can be used to fabricate p-type transistors at low cost and temperature and could be potentially integrated with n-type oxide-based transistors to create complementary circuits. However, the materials suffer from low crystallization controllability and high film defect density, resulting in uncompetitive device performance. Here we show that pure-tin perovskite thin-film transistors can be created using triple A cations of caesium–formamidinium–phenethylammonium. The approach leads to high-quality cascaded tin perovskite channel films with low-defect, phase-pure perovskite/dielectric interfaces. The optimized thin-film transistors exhibit hole mobilities of over 70 cm² V⁻¹ s⁻¹ and on/off current ratios of over 10⁸, which are comparable with commercial low-temperature polysilicon transistors. The transistors are fabricated using solution-processing methods at temperatures no higher than 100 °C. We also integrate the devices with n-type metal oxide transistors to create complementary inverters with voltage gains of 370, and NOR and NAND logic gates with rail-to-rail switching performance.

卤化锡钙钛矿的化学通式为 ASnX ₃，其中 A 是一价阳离子，X 是一价卤化物阴离子。这些半导体材料可用于以低成本和低温度制造 p 型晶体管，并有可能与 n 型氧化物晶体管集成以创建互补电路。然而，这些材料存在结晶可控性低、薄膜缺陷密度高的问题，导致器件性能缺乏竞争力。在这里，我们证明纯锡钙钛矿薄膜晶体管可以使用铯-甲脒-苯乙基铵的AAA阳离子来制造。该方法可产生具有低缺陷、纯相钙钛矿/介电界面的高质量级联锡钙钛矿通道薄膜。优化的薄膜晶体管表现出超过 70 cm ²  V ^-1  s的空穴迁移率^{-1和超过10 8}的开/关电流比，与商用低温多晶硅晶体管相当。这些晶体管是在不高于 100 °C 的温度下使用溶液处理方法制造的。我们还将这些器件与 n 型金属氧化物晶体管集成，以创建电压增益为 370 的互补逆变器，以及具有轨到轨开关性能的 NOR 和 NAND 逻辑门。