Gate-Tunable Spin Seebeck Effect and Pure Spin Current Generation in Molecular Junctions Based on Bipolar Magnetic Molecules,Nano Letters

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Gate-Tunable Spin Seebeck Effect and Pure Spin Current Generation in Molecular Junctions Based on Bipolar Magnetic Molecules
Nano Letters ( IF 9.6 ) Pub Date : 2023-08-21 , DOI: 10.1021/acs.nanolett.3c01702
Yujie Hu _{1,

2} , Shanshan Liu _{1,

2} , Jing Huang ₃ , Xingxing Li _{1,

2,

4,

5} , Qunxiang Li _{1,

2,

4,

5}

Affiliation

Generating pure spin currents is very desirable in spintronics, as it provides a promising way to substantially reduce Joule heating and achieve ultrahigh integration density. However, to date, most spintronic devices exhibit spin currents that are accompanied by charge currents. The generation of pure spin currents on the nanoscale, particularly at the single-molecule level, remains challenging. Here, we propose that by exploiting our recently reported bipolar magnetic molecules (BMMs) as the core component of single-molecule devices, where the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) come from different spin channels, the generation of pure spin currents can be easily realized via the spin Seebeck effect (SSE) with applied temperature gradient. Moreover, the spin Seebeck coefficient can be modulated over a wide range by applying an external gate voltage. The proposal is verified through first-principles calculations on two BMM-based molecular junctions.

中文翻译：

基于双极磁性分子的分子结中栅极可调自旋塞贝克效应和纯自旋电流产生

产生纯自旋电流在自旋电子学中是非常理想的，因为它提供了一种有前途的方法来大幅减少焦耳热并实现超高集成密度。然而，迄今为止，大多数自旋电子器件都表现出伴随着充电电流的自旋电流。在纳米尺度上，特别是在单分子水平上产生纯自旋电流仍然具有挑战性。在这里，我们建议，通过利用我们最近报道的双极磁性分子（BMM）作为单分子器件的核心组件，其中最高占据分子轨道（HOMO）和最低未占据分子轨道（LUMO）来自不同的自旋通道，通过施加温度梯度的自旋塞贝克效应（SSE）可以轻松实现纯自旋电流的产生。此外，通过施加外部栅极电压，可以在很宽的范围内调制自旋塞贝克系数。该提议通过对两个基于 BMM 的分子连接的第一性原理计算得到验证。

更新日期：2023-08-21

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