Transition metal dichalcogenides (TMDCs) are promising candidates for future optoelectronic devices accounting for their high carrier mobility and excellent quantum efficiency. However, the limited light absorption efficiency in atomically thin layers significantly hinders photocarrier generation, thereby impairing the optoelectronic performance and hindering practical applications. Herein, we successfully synthesized In₂Se₃/WSe₂ heterostructures through a typical two-step chemical vapor deposition (CVD) method. The In₂Se₃ nanosheet with strong light absorption capability, serving as the light absorption layer, was integrated with the monolayer WSe₂, enhancing the photosensitivity of WSe₂ significantly. Upon laser irradiation with a wavelength of 520 nm, the In₂Se₃/WSe₂ heterostructure device shows an ultrahigh photoresponsivity with a value as high as 2333.5 A/W and a remarkable detectivity reaching up to 6.7 × 10¹² Jones, which is the highest among almost the reported TMDCs-based heterostructures grown via CVD even some fabricated by mechanical exfoliation (ME). Combing the advantages of CVD method such as large scale, high yield, and clean interface, the In₂Se₃/WSe₂ heterostructures would provide a novel path for future high-performance optoelectronic device.

过渡金属二硫属化物（TMDC）因其高载流子迁移率和出色的量子效率而成为未来光电器件的有希望的候选者。然而，原子薄层中有限的光吸收效率显着阻碍了光载流子的产生，从而损害了光电性能并阻碍了实际应用。在此，我们通过典型的两步化学气相沉积（CVD）方法成功合成了In ₂ Se ₃ /WSe _{2异质结构。}将具有强光吸收能力的In ₂ Se ₃纳米片作为光吸收层与单层WSe _{2集成在一起，显着增强WSe 2}的光敏性。在波长520 nm的激光照射下，In ₂ Se ₃ /WSe ₂异质结构器件表现出高达2333.5 A/W的超高光响应性和高达6.7 × 10 ¹² Jones的显着探测率。在几乎所有报道的通过 CVD 生长的基于 TMDC 的异质结构中最高，甚至有些是通过机械剥离 (ME) 制造的。结合CVD法大规模、高产率、界面干净等优点，In ₂ Se ₃ /WSe ₂异质结构将为未来高性能光电器件提供一条新途径。