Background

Z-scheme semiconductor heterostructure promotes the practical separation of electron-hole pairs and enhances the carrier separation efficiency, which has broad application prospects in efficient electrocatalytic hydrogen production (HER). However, it remains a significant challenge to construct high-quality directly Z-scheme heterostructure effectively.

Methods

In this work, the construction of stable and controllable two-dimensional (2D) Z-scheme MnTiO₃/C₃N₄ (MTO/CN) heterostructure via In-situ growth strategy is obtained. This strategy relies mainly on the cooperation of ligand covalent bonds arising from the controlled growth of precursors and the tendency of metal ions to acquire stable electronic configurations.

Significant findings

Benefiting from the unique electronic structure of heterostructure, the excellent performance of HER based on the MTO/CN heterostructure is systematically investigated. It reveals that the overpotential of the MTO/CN heterostructure is only 357 mV at 10 mA cm², which is 2.02 times lower compared to the pure g-C₃N₄. At the same time, the ESCA results show that the value of C_dl of the heterostructure is 42.79 mF cm⁻², which is 6.26 times higher compared to the pure g-C₃N₄. Furthermore, this strategy provides new insight and theoretical guidance for the design of the Z-scheme semiconductor heterostructure.

中文翻译：

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原位合成二维Z型MnTiO3/g-C3N4异质结构用于高效电催化制氢

背景

Z型半导体异质结构促进了电子-空穴对的实用分离，提高了载流子分离效率，在高效电催化制氢（HER）方面具有广阔的应用前景。然而，有效构建高质量的直接Z型异质结构仍然是一个重大挑战。

方法

在这项工作中，通过原位生长策略构建了稳定可控的二维（2D）Z型MnTiO ₃ /C ₃ N _{4 (MTO/CN)异质结构。}该策略主要依赖于前体受控生长产生的配体共价键的配合以及金属离子获得稳定电子构型的趋势。

重大发现

受益于异质结构独特的电子结构，系统研究了基于MTO/CN异质结构的HER的优异性能。^{结果表明，MTO/CN异质结在10 mA cm 2}下的过电势仅为357 mV ，比纯gC ₃ N ₄低2.02倍。同时ESCA结果表明异质结构的C _{dl值为42.79 mF cm} ^-2，比纯gC ₃ N ₄高6.26倍。此外，该策略为Z型半导体异质结构的设计提供了新的见解和理论指导。