三甲基铝和氟化氢沉积AlF <sub>3的</sub>原子层,The Journal of Physical Chemistry C

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三甲基铝和氟化氢沉积AlF _3的原子层
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2015-06-10 00:00:00 , DOI: 10.1021/acs.jpcc.5b02625
Younghee Lee ₁ , Jaime W. DuMont ₁ , Andrew S. Cavanagh ₁ , Steven M. George ₁

Affiliation

使用三甲基铝（TMA）和氟化氢（HF）证明了AlF ₃的原子层沉积（ALD ）。HF源是HF-吡啶。使用原位石英晶体微量天平（QCM），四极质谱仪（QMS）和傅里叶变换红外（FTIR）光谱学测量来研究AlF ₃ ALD。在75至300°C的温度下检查了AlF ₃ ALD膜的生长。TMA和HF反应均显示出自限性行为。AlF ₃ ALD的最大每循环质量增加（MGPC）为44 ng /（cm ²循环）发生在100°C。在较高温度下，MGPC值降低。当TMA和HF能够蚀刻AlF时，在T > 250°C时MGPC值为负值₃部电影。还使用异位X射线反射率（XRR）和椭圆偏振光谱（SE）测量来确定薄膜厚度。通过异位分析确定的AlF ₃ ALD生长速率在100°C下为1.43Å/循环。这些异位测量与原位QCM测量非常吻合。FTIR分析监测了AlF ₃ ALD在500–900 cm ^–1的Al–F拉伸振动中红外吸收的增长。另外，观察到与AlF（CH ₃）₂一致的吸收峰。分别在TMA和HF暴露后表面上的HF和HF物种。X射线光电子能谱（XPS）和卢瑟福背散射光谱（RBS）测量表明，沉积的薄膜几乎是化学计量的AlF ₃，氧杂质仅为〜2 at％。AlF ₃ ALD可用于许多应用，例如紫外线光学膜，锂离子电池电极的保护涂层以及路易斯酸催化膜。

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Atomic Layer Deposition of AlF3 Using Trimethylaluminum and Hydrogen Fluoride

The atomic layer deposition (ALD) of AlF₃ was demonstrated using trimethylaluminum (TMA) and hydrogen fluoride (HF). The HF source was HF-pyridine. In situ quartz crystal microbalance (QCM), quadrupole mass spectrometer (QMS), and Fourier transform infrared (FTIR) spectroscopy measurements were used to study AlF₃ ALD. The AlF₃ ALD film growth was examined at temperatures from 75 to 300 °C. Both the TMA and HF reactions displayed self-limiting behavior. The maximum mass gain per cycle (MGPC) of 44 ng/(cm² cycle) for AlF₃ ALD occurred at 100 °C. The MGPC values decreased at higher temperatures. The MGPC values were negative at T > 250 °C when TMA and HF were able to etch the AlF₃ films. Film thicknesses were also determined using ex situ X-ray reflectivity (XRR) and spectroscopic ellipsometry (SE) measurements. The AlF₃ ALD growth rate determined by the ex situ analysis was 1.43 Å/cycle at 100 °C. These ex situ measurements were in excellent agreement with the in situ QCM measurements. FTIR analysis monitored the growth of infrared absorbance from Al–F stretching vibrations at 500–900 cm^–1 during AlF₃ ALD. In addition, absorption peaks were observed that were consistent with AlF(CH₃)₂ and HF species on the surface after the TMA and HF exposures, respectively. X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectrometry (RBS) measurements revealed that the deposited films were nearly stoichiometric AlF₃ with an oxygen impurity of only ∼2 at %. AlF₃ ALD may be useful for a number of applications such as ultraviolet optical films, protective coatings for the electrodes of Li ion batteries, and Lewis acid catalytic films.

更新日期：2015-06-10

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