基于少层 MoTe2 的大规模 N 型 FET 和同质 CMOS 逆变器阵列,Advanced Electronic Materials

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基于少层 MoTe2 的大规模 N 型 FET 和同质 CMOS 逆变器阵列
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2023-08-09 , DOI: 10.1002/aelm.202300268
Zhixuan Cheng _{1,

2} , Xionghui Jia _{1,

2} , Xing Cheng _{1,

2} , Yiwen Song _{1,

3} , Yuqia Ran _{1,

2} , Minglai Li _{1,

2} , Wanjin Xu ₁ , Yanping Li ₁ , Yu Ye ₁ , Lun Dai _{1,

2,

4}

Affiliation

2D MoTe ₂被认为是半导体纳米电子集成的有利候选者。化学气相沉积生长的 MoTe ₂通常呈现 p 型特征。为了实现互补金属氧化物半导体（CMOS）反相器等基本电子单元，大规模p型和n型晶体管的可控制造至关重要。_{在这里，利用无缝共面金属 1T'-WTe 2}触点成功制造了大规模 MoTe ₂ n 沟道场效应晶体管 (n-FET) 阵列，以降低接触电阻。高k HfO ₂作为栅极电介质，其原子层沉积 (ALD) 工艺对 2H-MoTe _{2产生 n 掺杂效应}渠道。FET 具有典型的 n 型特性，平均电子密度和开/关比分别为 ≈1.7 × 10 ¹³ cm ^-2 和 2.1 × 10 ⁴，分别。此外，还制造了大规模同质 CMOS 反相器阵列，显示出清晰的逻辑摆幅、低功耗（约 0.4 nW）和高器件良率（约 92%）。值得注意的是，它们的电压传输特性表现出较小的滞后，并且在空气中保存 16 个月后仍能正常工作，表明器件具有较高的稳定性。统计结果表明n-FET和CMOS反相器在性能上均具有较高的一致性和可靠性。值得注意的是，这种制造方法无需转移工艺，并且与传统硅技术兼容。这项工作为少层MoTe ₂在半导体纳米电子集成中的应用铺平了道路。

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Large-Scale N-Type FET and Homogeneous CMOS Inverter Array Based on Few-Layer MoTe2

2D MoTe₂ is regarded as a favorable candidate for semiconductor nanoelectronics integration. Chemical-vapor-deposition-grown MoTe₂ usually presents p-type characteristics. In order to realize basic electronic units like complementary metal-oxide-semiconductor (CMOS) inverter, controllable fabrication of p- and n-type transistors at large scale is of vital importance. Here, large-scale MoTe₂ n-channel field-effect transistor (n-FET) arrays are successfully fabricated with seamless coplanar metallic 1T′-WTe₂ contacts to reduce contact resistance. High-k HfO₂ serves as a gate dielectric and its atomic-layer-deposition (ALD) process causes an n-doping effect on the 2H-MoTe₂ channel. The FETs perform typical n-type characteristics with average electron density and on/off ratio of ≈1.7 × 10¹³ cm⁻² and 2.1 × 10⁴, respectively. Furthermore, large-scale homogeneous CMOS inverter arrays are fabricated, showing clear logic swing with low power consumption (≈0.4 nW) and high device yield (≈92%). Notably, their voltage transfer characteristics exhibit small hysteresis, and they work well after being kept in air for 16 months, indicating high device stability. The statistical results show that both the n-FETs and CMOS inverters have high uniformity and reliability in performance. Significantly, this fabrication method is free from transfer processes and compatible with traditional silicon technology. This work paves the way for the application of few-layer MoTe₂ in semiconductor nanoelectronics integration.

更新日期：2023-08-09

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