Passivation is usually used to reduce the leakage current between contacts of CdZnTe devices with pixel electrodes. For CdZnTe devices with planar electrodes, different passivation sequences and passivation regions result in two different device structures. In this paper, two different passivation sequences were used to treat the etched CdZnTe: depositing electrodes followed by passivation, and passivation followed by depositing electrodes, the difference they caused was whether the region below the contact was passivated. The leakage currents of the two structures were compared, and chemical components and Schottky barriers produced by these two different treatments were measured and discussed. Finally, the energy spectra of the two treatments were tested. It was found that, for CZT devices with planar electrodes, the method of depositing electrodes after passivation could significantly reduce the leakage current, although the contacts and CZT were separated by the passivation layer, however, the lower noise from reduced leakage current improved the energy resolution.

中文翻译：

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钝化序列对平面 CdZnTe 探测器性能的影响


钝化通常用于减少带有像素电极的 CdZnTe 器件触点之间的漏电流。对于具有平面电极的 CdZnTe 器件，不同的钝化序列和钝化区域会导致两种不同的器件结构。在本文中，采用两种不同的钝化顺序来处理刻蚀的 CdZnTe：沉积电极后钝化，钝化后沉积电极，它们造成的区别在于触点下方的区域是否被钝化。比较了两种结构的泄漏电流，测量和讨论了这两种不同处理产生的化学成分和肖特基势垒。最后，测试了两种处理的能谱。研究发现，对于具有平面电极的 CZT 器件，钝化后沉积电极的方法可以显著降低漏电流，尽管触点和 CZT 被钝化层隔开，但是，减少漏电流带来的较低噪声提高了能量分辨率。