解读二维 MoS2 的空位缺陷演化，打造可靠的晶体管,ACS Applied Materials & Interfaces

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解读二维 MoS2 的空位缺陷演化，打造可靠的晶体管
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2023-08-05 , DOI: 10.1021/acsami.3c07806
Li Gao ₁ , Xiankun Zhang ₁ , Huihui Yu ₁ , Mengyu Hong ₁ , Xiaofu Wei ₁ , Zhangyi Chen ₁ , Qinghua Zhang ₂ , Qingliang Liao _{1,

3} , Zheng Zhang _{1,

3} , Yue Zhang _{1,

3}

Affiliation

二维（2D）MoS ₂是下一代集成电路（IC）晶体管的优异候选沟道材料。_{然而，由于空位缺陷（例如硫空位（V S ））的严重威胁，MoS}₂的可靠性受到极大关注。_{评估空位缺陷对MoS 2}晶体管使用可靠性的影响至关重要，但一直受到系统跟踪和分析空位缺陷在使用环境中的变化和影响的困难的限制。_{在这里，建立了一个模拟引发剂来解释MoS 2}中空位缺陷的演变及其对晶体管可靠性的影响。结果表明，低于 1.3% 的 V _S是通过引发过程中缓慢富集而分离出来的。超过 1.3% 的 V _S倾向于成对富集，超过 3.5% 的富集 V _S很容易演变成纳米孔。沟道中电子掺杂的富集V _{S导致阈值电压 (V}_th ) 负漂移接近 6 V，而扩展的纳米孔则引发晶体管的 V _th滚降和穿通。最后，提出了硫蒸汽沉积来限制V _S富集，并构建了可靠的MoS _{2晶体管。}我们的研究提供了一种破译和识别缺陷影响的新方法。

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Deciphering Vacancy Defect Evolution of 2D MoS2 for Reliable Transistors

Two-dimensional (2D) MoS₂ is an excellent candidate channel material for next-generation integrated circuit (IC) transistors. However, the reliability of MoS₂ is of great concern due to the serious threat of vacancy defects, such as sulfur vacancies (V_S). Evaluating the impact of vacancy defects on the service reliability of MoS₂ transistors is crucial, but it has always been limited by the difficulty in systematically tracking and analyzing the changes and effects of vacancy defects in the service environment. Here, a simulated initiator is established for deciphering the evolution of vacancy defects in MoS₂ and their influence on the reliability of transistors. The results indicate that V_S below 1.3% are isolated by slow enrichment during initiation. Over 1.3% of V_S tend to enrich in pairs and over 3.5% of the enriched V_S easily evolve into nanopores. The enriched V_S with electron doping in the channel cause the threshold voltage (V_th) negative drift approaching 6 V, while the expanded nanopores initiate the V_th roll-off and punch-through of transistors. Finally, sulfur steam deposition has been proposed to constrain V_S enrichment, and reliable MoS₂ transistors are constructed. Our research provides a new method for deciphering and identifying the impact of defects.

更新日期：2023-08-05

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