2D III-VI semiconductors have emerged as promising materials for optoelectronic devices due to their tunable bandgaps, efficient light absorption and high carrier mobility. Among III-VI group, 2D indium telluride (InTe) has been studied very little compared with its well-known congeners such as InSe and GaSe. Although InTe possesses remarkable electrical and optical properties, the investigation of its device applications is greatly hindered due to the shortage of scalable synthesis method. Here, we synthesized centimeter-scale 2D InTe films via a pulsed laser deposition method. The structure of as-grown InTe films was systematically studied, exhibiting good continuity, uniformity and high degree of crystallinity. Meanwhile, layer-dependent bandgaps (1.21∼1.65 eV) were observed from the optical characterization. The InTe based photodetectors show a broadband photoresponse from ultraviolet (370 nm) to near-infrared region (980 nm). The photoresponsivity and detectivity of the InTe photodetectors can achieve 6.35 A/W and 1.55×10¹¹ under 370 nm illumination, respectively, which outperform many photodetectors based on large-area 2D materials. Notably, InTe photodetectors also demonstrate strong layer-dependent photoresponse from 2 L to 10 L upon different wavelength illumination. Our work will inspire the research interests to further develop the practical applications of 2D InTe in the field of photodetection devices.

二维 III-VI 半导体由于其可调谐带隙、高效光吸收和高载流子迁移率而成为光电器件的有前途的材料。在III-VI族中，与众所周知的InSe和GaSe等同系物相比，二维碲化铟(InTe)的研究很少。尽管InTe具有显着的电学和光学性质，但由于缺乏可扩展的合成方法，其器件应用的研究受到很大阻碍。在这里，我们通过脉冲激光沉积方法合成了厘米级的二维 InTe 薄膜。对生长的InTe薄膜的结构进行了系统研究，表现出良好的连续性、均匀性和高结晶度。同时，从光学表征中观察到层相关的带隙（1.21∼1.65 eV）。基于 InTe 的光电探测器表现出从紫外线 (370 nm) 到近红外区域 (980 nm) 的宽带光响应。InTe光电探测器的光响应度和探测率可达到6.35 A/W和1.55×10¹¹在 370 nm 照明下，分别优于许多基于大面积 2D 材料的光电探测器。值得注意的是，InTe 光电探测器在不同波长照明下也表现出从 2 L 到 10 L 的强层依赖性光响应。我们的工作将激发人们的研究兴趣，进一步开发二维 InTe 在光电探测器件领域的实际应用。