Herein, a 2D/0D g-C₃N₄/Cu₂SnS₃ heterostructure is successfully constructed via the facile calcination method, and its application to photocatalytic CO₂ conversion is demonstrated for the first time. The fabricated g-C₃N₄/Cu₂SnS₃ nanocomposite is featured with its unique Cu-C and Cu-N dual chemical bond at the interface. The engineered g-C₃N₄/Cu₂SnS₃ nanocomposites record a superior CO production rate of 18.2 μmol∙g^-1∙h^-1 with an apparent quantum yield of 2.2% at 500 nm under illumination, which is the highest among g-C₃N₄/ternary metal sulfide photocatalysts to the best of our knowledge. This notable improvement is attributed to the effective incorporation of Cu₂SnS₃ NPs onto the surfaces of ultra-thin g-C₃N₄ and, the formation of Cu-N and Cu-C dual bonds at the interface. This helps not only the activation of interface defect-mediated Z-scheme conduction but also supplies highly reactive Cu sites in the Cu₂SnS₃ NPs for efficient photocatalytic CO₂ conversion.

在此，通过简单的煅烧方法成功构建了2D/0D gC ₃ N ₄ /Cu ₂ SnS ₃异质结构，并首次证明了其在光催化CO _{2转化中的应用。}制备的gC ₃ N ₄ /Cu ₂ SnS ₃纳米复合材料在界面处具有独特的Cu-C和Cu-N双化学键。工程化的 gC ₃ N ₄ /Cu ₂ SnS _{3纳米复合材料记录了 18.2 μmol∙g} ^-1 ∙h ^-1的优异 CO 生产率在500 nm光照下，表观量子产率为2.2% ，是目前gC ₃ N ₄  /三元金属硫化物光催化剂中最高的。这一显着的改进归因于Cu ₂ SnS ₃ NPs在超薄gC ₃ N ₄表面上的有效结合，以及在界面处Cu-N和Cu-C双键的形成。这不仅有助于激活界面缺陷介导的Z型传导，而且还可以在Cu ₂ SnS ₃ NPs中提供高反应性的Cu位点，以实现高效的光催化CO ₂转化。