Broadband photodetectors with self-driven functions have attracted intensive scientific interest due to their low energy consumption and high optical gain. However, high-performance broadband self-driven photodetectors are still a significant challenge due to the complex fabrication processes, environmental toxicity, high production costs of traditional 3D semiconductor materials and sharply raised contact resistance, severe interfacial recombination of 2D materials and 2D/3D mixed dimension heterojunction. Here, 1D p-Te/2D n-Bi₂Te₃ heterojunctions are constructed by the simple and low-cost hydrothermal method. 1D p-Te/2D n-Bi₂Te₃ devices are applied in photoelectrochemical (PEC) photodetectors, with their high performance attributed to the good interfacial contacts reducing interface recombination. The device demonstrated a broad wavelength range (365–850 nm) with an/_ph//_dark as high as 377.45. The R_iD*, and external quantum efficiency (EQE) values of the device were as high as 12.07 mA/W, 5.87 × 10¹⁰ Jones, and 41.05%, respectively, which were significantly better than the performance of the prepared Bi₂Te₃ and Te devices. A comparison of the freshly fabricated device and the device after 30 days showed that 1D p-Te/2D n-Bi₂Te₃ had excellent stability with only 18.08% decay of photocurrent. It is anticipated that this work will provide new emerging material for future design and preparation of a high-performance self-driven broadband photodetector.

具有自驱动功能的宽带光电探测器由于其低能耗和高光学增益而引起了广泛的科学兴趣。然而，由于传统3D半导体材料的复杂制造工艺、环境毒性、高生产成本以及急剧升高的接触电阻、2D材料和2D/3D混合材料的严重界面复合，高性能宽带自驱动光电探测器仍然是一个重大挑战。维度异质结。这里，1D p-Te/2D n-Bi ₂ Te ₃异质结是通过简单且低成本的水热法构建的。1D p-Te/2D n-Bi ₂ Te ₃器件应用于光电化学（PEC）光电探测器，其高性能归因于良好的界面接触减少了界面复合。该器件具有宽波长范围 (365–850 nm)，an/ _ph / _dark高达 377.45。器件的R i _D * 和外量子效率（EQE）值分别高达12.07 mA/W、5.87 × 10 10 Jones^和41.05%，明显优于所制备的Bi ₂性能Te ₃和 Te 器件。新制造的器件与 30 天后的器件的比较表明，1D p-Te/2D n-Bi ₂ Te₃具有优异的稳定性，光电流衰减仅为18.08%。预计这项工作将为未来高性能自驱动宽带光电探测器的设计和制备提供新兴材料。