<br>少数载流子寿命的精确提取第一部分：瞬态方法,IEEE Transactions on Electron Devices

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少数载流子寿命的精确提取第一部分：瞬态方法
IEEE Transactions on Electron Devices ( IF 2.9 ) Pub Date : 2023-06-28 , DOI: 10.1109/ted.2023.3286798
Paul Stampfer ₁ , Bernhard Stampfer ₂ , Tibor Grasser ₃ , Michael Waltl ₂

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明确且高的少数载流子寿命是高性能光电探测器的关键推动因素。为了验证目标载流子寿命，文献中提出了各种实验方法，例如开路电压衰减 (OCVD)、反向恢复 (RR) 和组合电流-电压 ( IV )/电容-电压 ( CV ) (cIVCV) 方法。然而，不同技术提取的寿命可能有所不同，这主要是由于外延层厚度等几何效应造成的。为了评估这些方法的质量，对专用测试结构（即嵌入 20 ${ \boldsymbol {\mu }}\text{m}$ 外延 pp+ 硅晶圆中的 pn 结进行了表征。在这项工作的第一部分中，我们提出了描述硅中少数载流子寿命的理论框架，并回顾了基于两种选定的瞬态方法（即 OCVD 和 RR）的提取。虽然这些方法的实验工作比稳态表征（例如 cIVCV）更具挑战性，但数据分析的要求似乎较低。为了验证这些方法的准确性，我们将它们与基于具有各种少数载流子寿命的漂移扩散模型的计算机模拟进行了基准测试。为了研究电场（与低掺杂外延层到高掺杂衬底跃迁相关）对提取的载流子寿命的影响，比较了有衬底和没有衬底的模拟，以及这种低-高跃迁对载流子寿命的强烈影响。观察提取的参数。这种效应可以用与低-高过渡区域相关的有效表面复合速度来建模。此外，还分析了上述结构的实验数据并与计算机模拟进行了比较。我们可以证明，OCVD 和 RR 是提取外延 pn 结上有效载流子寿命的绝佳候选方法。

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Accurate Extraction of Minority Carrier Lifetimes鈥擯art I: Transient Methods

A well-defined and high minority carrier lifetime is a key enabler for high-performance optoelectronic detectors. To verify the targeted carrier lifetime various experimental methods such as open circuit voltage decay (OCVD), reverse recovery (RR), and combined current-voltage ( I-V )/capacitance-voltage ( C-V ) (cIVCV) methods have been proposed in the literature. However, the extracted lifetimes can differ between the techniques, primarily due to geometric effects such as the epitaxial layer thickness. To evaluate the quality of these methods dedicated test structures, i.e., p-n junctions embedded in 20

${ \boldsymbol {\mu }}\text{m}$

epitaxial pp+ silicon wafers, are characterized. In the first part of this work, we present the theoretical framework for describing minority carrier lifetimes in Silicon and review their extraction based on two selected transient methods, i.e., OCVD and RR. Whilst the experimental efforts for these methods are more challenging than for steady-state characterizations, such as cIVCV, the data analysis appears less demanding. To verify the accuracy of the methods, we benchmark them against computer simulations based on the drift-diffusion model with various minority carrier lifetimes. To investigate the influence of the electric field (associated with the lowly-doped epitaxial layer to the highly doped substrate transition) on the extracted carrier lifetimes, simulations with and without substrate are compared, and a strong influence of this low-high transition on the extracted parameters is observed. This effect can be modeled with an effective surface recombination velocity associated with the low-high transition region. Additionally, experimental data of the aforementioned structure are analyzed and compared to the computer simulations. We can show that OCVD and RR are excellent candidates for the extraction of effective carrier lifetimes on epitaxial p-n junctions.

更新日期：2023-06-28

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