用于 β-Ga2O3 场效应晶体管的二维非晶 GaOX 栅极电介质,ACS Applied Materials & Interfaces

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用于 β-Ga2O3 场效应晶体管的二维非晶 GaOX 栅极电介质
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2023-07-27 , DOI: 10.1021/acsami.3c07126
Sanghyun Moon ₁ , Donggyu Lee ₁ , Jehwan Park ₁ , Jihyun Kim ₁

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必须确定合适的栅极电介质才能制造金属-绝缘体-半导体场效应晶体管（MISFET）；然而，由于缺乏高质量的原生氧化物，这对于化合物半导体来说一直是一个挑战。本研究采用液态镓挤压技术制造具有高介电常数的二维非晶氧化镓（GaO _{X ），其厚度在原子尺度上精确控制（单层，~4.5 nm；双层，~8.5 nm）。}具有超宽能带隙（4.5-4.9 eV）的β相氧化镓（β-Ga ₂ O ₃）已成为下一代功率半导体材料，并在此作为沟道材料出现。二维非晶 GaO _{X电介质与 β-Ga}₂ O ₃导电纳米层相结合，所得 β-Ga ₂ O ₃ MISFET 在高达 250 °C 的温度下保持稳定。2D非晶GaO _{X是缺氧的，并且2D非晶GaO}_X和β-Ga ₂ O ₃之间形成具有优异均匀性和可扩展性的高质量界面。所制造的 MISFET 具有约 +5 V 的宽栅极电压摆幅、高电流开/关比、适中的场效应载流子迁移率和良好的三端击穿电压（~138 V）。Ni/GaO _X /β-Ga ₂ O ₃金属-绝缘体-半导体 (MIS) 结构的载流子传输在高栅极偏置区域中表现出肖特基发射和福勒-诺德海姆 (F-N) 隧道效应的组合。 25°C，而在高温下，分别在低栅极偏压和高栅极偏压区域显示肖特基发射和 F-N 隧道效应。这项研究表明，可以生产二维 GaO _{X栅极介电层并将其合并到有源沟道层中，以在室温（~25°C）下形成 MIS 结构，从而可以轻松制造 MISFET 器件。}

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2D Amorphous GaOX Gate Dielectric for β-Ga2O3 Field-Effect Transistors

Appropriate gate dielectrics must be identified to fabricate metal–insulator–semiconductor field-effect transistors (MISFETs); however, this has been challenging for compound semiconductors owing to the absence of high-quality native oxides. This study uses the liquid-gallium squeezing technique to fabricate 2D amorphous gallium oxide (GaO_X) with a high dielectric constant, where its thickness is precisely controlled at the atomic scale (monolayer, ∼4.5 nm; bilayer, ∼8.5 nm). Beta-phase gallium oxide (β-Ga₂O₃) with an ultrawide energy bandgap (4.5–4.9 eV) has emerged as a next-generation power semiconductor material and is presented here as the channel material. The 2D amorphous GaO_X dielectric is combined with a β-Ga₂O₃ conducting nanolayer, and the resulting β-Ga₂O₃ MISFET is stable up to 250 °C. The 2D amorphous GaO_X is oxygen-deficient, and a high-quality interface with excellent uniformity and scalability forms between the 2D amorphous GaO_X and β-Ga₂O₃. The fabricated MISFET exhibits a wide gate-voltage swing of approximately +5 V, a high current on/off ratio, moderate field-effect carrier mobility, and a decent three-terminal breakdown voltage (∼138 V). The carrier transport of the Ni/GaO_X/β-Ga₂O₃ metal–insulator–semiconductor (MIS) structure displays a combination of Schottky emission and Fowler–Nordheim (F–N) tunneling in the high-gate-bias region at 25 °C, whereas at elevated temperatures it shows Schottky emission and F–N tunneling in the low- and high-gate-bias regions, respectively. This study demonstrates that a 2D GaO_X gate dielectric layer can be produced and incorporated into an active channel layer to form an MIS structure at room temperature (∼25 °C), which enables the facile fabrication of MISFET devices.

更新日期：2023-07-27

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