基于MoS2通道的全二维浮栅晶体管的非易失性存储和突触功能演示,ACS Applied Electronic Materials

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基于MoS2通道的全二维浮栅晶体管的非易失性存储和突触功能演示
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2023-07-27 , DOI: 10.1021/acsaelm.3c00595
Wei Li ₁ , Jiaying Li ₁ , Yuhua Chen ₁ , Zhanzi Chen ₁ , Weilin Li ₁ , Zhuowen Wang ₁ , Tianhui Mu ₁ , Zhao Chen ₁ , Ruijing Yang ₁ , Ziqian Meng ₁ , Yucheng Wang ₁ , Feng Li _{1,

2} , Shaoxi Wang ₁

Affiliation

随着后摩尔时代的到来，基于大块材料的存储器件的发展逐渐进入瓶颈期。二维（2D）材料因其优异的光电和机械性能而备受关注。此外，基于二维范德华异质结构的浮栅器件因其在非易失性存储器方面的巨大潜力而引起了广泛的关注。本文制备了一种基于MoS ₂ /BN/石墨烯异质结构的浮栅器件，并研究了其电存储性能和突触功能。最终，该器件获得接近~10 ^{5的开关比}，在±60 V的扫描范围下具有107.8 V的大存储窗口，1000次循环后具有良好的耐久性，并且具有1500 s以上的电荷保持能力。此外，该装置还可用作人工突触来模拟基本突触功能，并实现更加线性和对称的长期增强和长期抑制曲线。同时，利用该装置构建的卷积神经网络经过1000次训练，手写数字识别准确率高达95.5%。这些结果证明了二维材料浮栅器件在非易失性存储器和神经形态计算方面的巨大潜力，为下一代存储器件的开发铺平了道路。

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Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS2 Channels

With the advent of post-Moore era, the development of memory devices based on bulk materials gradually entered the bottleneck period. Two-dimensional (2D) materials have received much attention due to their excellent optoelectronic and mechanical properties. Also, floating-gate devices based on 2D van der Waals heterostructures have drawn widespread attention in virtue of their great potential for nonvolatile memory. In this paper, a floating-gate device based on a MoS₂/BN/graphene heterostructure was fabricated and its electrical storage performance and synaptic function were investigated. Finally, the device obtains a switching ratio of close to ∼10⁵, a large storage window of 107.8 V under a sweeping range of ±60 V, good endurance after 1000 cycles, and charge retention capability above 1500 s. In addition, the device can be used as an artificial synapse to simulate a basic synaptic function and achieve a more linear and symmetrical long-term potentiation and long-term depression profiles. At the same time, the constructed convolutional neural network using this device reaches a high recognition accuracy of 95.5% for handwritten numerals after 1000 times training. These results demonstrate the great potential of 2D material floating-gate devices for nonvolatile memory and neuromorphic computing, which pave the way for the development of next-generation memory devices.

更新日期：2023-07-27

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