Near infra-red perovskite light-emitting diodes (NIR PeLEDs) with high efficiency show potential in display panels, security systems, medical therapeutics, spectroscopy and various other applications. An alternative material, namely 3′,3′′′,3′′′′′-(1,3,5-triazine-2,4,6-triyl) tris(([1,1′-biphenyl]-3-carbonitrile)) (CN-T2T), is investigated herein as an electron transport layer (ETL) for efficient solution-processed NIR PeLEDs. In this work, we focused on controlling the thickness of CN-T2T to optimize the device performance. Several electrical properties were investigated to evaluate the influence of CN-T2T. As a consequence, the best performance of NIR PeLED was achieved with an optimized thickness of 50 nm CN-T2T due to adequate charge balance and favorable location of the recombination zone in the active layer. The NIR PeLED device with 50 nm CN-T2T thickness exhibited a maximum EQE of 18.01% and radiance of 366.76 W sr⁻¹ m⁻². Our findings suggest CN-T2T as an alternative ETL that has the potential to improve the performance of NIR PeLED significantly towards the development of high-power NIR LEDs for practical applications.

中文翻译：

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优化三嗪基受体（CN-T2T）作为高效近红外钙钛矿发光二极管的电子传输层

高效率的近红外钙钛矿发光二极管 (NIR PeLED) 在显示面板、安全系统、医疗、光谱学和各种其他应用中显示出潜力。另一种材料，即 3',3''',3'''''-(1,3,5-三嗪-2,4,6-三基) tris(([1,1'-联苯]-3 -碳腈））（CN-T2T），本文研究作为高效溶液处理 NIR PeLED 的电子传输层（ETL）。在这项工作中，我们专注于控制 CN-T2T 的厚度以优化器件性能。研究了几种电性能以评估 CN-T2T 的影响。因此，由于充分的电荷平衡和有源层中复合区的有利位置，NIR PeLED 的最佳性能通过 50 nm CN-T2T 的优化厚度实现。^-1米^-2。我们的研究结果表明 CN-T2T 作为一种替代 ETL，有可能显着提高 NIR PeLED 的性能，从而有助于开发实际应用的高功率 NIR LED。