高性能、稳定的混合钙钛矿阴影效应能量发生器的接口工程,Chemistry of Materials

当前位置： X-MOL 学术 › Chem. Mater. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

高性能、稳定的混合钙钛矿阴影效应能量发生器的接口工程
Chemistry of Materials ( IF 7.2 ) Pub Date : 2023-07-25 , DOI: 10.1021/acs.chemmater.3c00421
Chih-Yu Chang, Yi-Ling Chin, Xin-Hao Huang

由于无处不在的阴影，光伏电池通常会遭受输出功率损失，这会极大地限制其实际使用，特别是在大都市地区。最近，一种可以在阴影条件下收集能量的新平台——阴影效应能量发生器（SEG）得到了展示。与之前报道的基于硅系统的SEG相比，在这项研究中，首次通过界面工程策略实现了基于甲基碘化铅（MAPbI ₃）钙钛矿的柔性SEG，具有高性能和长期稳定性，其中包括包含物原子层沉积（ALD）Al ₂ O ₃和聚{2,5-双(2-十二烷基十六烷基)-3,6-二(噻吩-2-基)吡咯-[3,4- c ]吡咯- 1,4( 2H,5 H )-二酮-alt- ( E )-1,2-双(3-氰基噻吩-2-基)乙烯}(DPP-CNTVT)电极和钙钛矿层之间的界面层。_{ALD Al 2} O ₃薄膜的引入有效抑制了移动碘离子引起的电极腐蚀问题，并确保了肖特基势垒的形成。另一方面，包含DPP-CNTVT层可以钝化钙钛矿层内的缺陷并促进电荷的产生和提取。凭借所有这些优势，由此产生的柔性 SEG 器件表现出高达 18.22 μW cm ^{–2的卓越功率密度}在半阴影条件下，可以点亮7个发光二极管和一个计算器。据我们所知，这是钙钛矿SEG器件的首次成功演示，并且此处实现的功率密度甚至优于在相同条件下测得的最先进的硅基SEG。此外，通过使用UV固化环氧/氟化聚合物聚（全氟（1-丁烯基乙烯基醚）（CYTOP）双层薄膜作为封装层，可以实现长期稳定的SEG器件。重要的是，我们的策略已经显示出巨大的优势。有望将SEG的适用性扩展到灵活的半透明电源和自供电光电探测器。这项工作为通过界面工程开发高性能和稳定的钙钛矿SEG提供了重要指导，

"点击查看英文标题和摘要"

Interface Engineering for High-Performance and Stable Hybrid Perovskite Shadow-Effect Energy Generator

Photovoltaic cells generally suffer a loss of output power due to ubiquitous shadows, which can greatly limit their practical use, especially in metropolitan regions. Very recently, a shadow-effect energy generator (SEG), a new platform that can scavenge energy under shadow conditions, has been demonstrated. In contrast to previously reported SEG based on silicon system, in this study, for the first time, methylammonium lead iodide (MAPbI₃) perovskite-based flexible SEG with high-performance and long-term stability is achieved through interface engineering strategy, involving inclusion of atomic-layer-deposited (ALD) Al₂O₃ and poly{2,5-bis(2-dodecylhexadecyl)-3,6-di(thiophen-2-yl)pyrrolo-[3,4-c]pyrrole-1,4(2H,5H)-dione-alt-(E)-1,2-bis(3-cyanothiophen-2-yl)ethene} (DPP-CNTVT) interfacial layers between the electrode and perovskite layer. The incorporation of the ALD Al₂O₃ film effectively suppresses the mobile iodide ion-caused electrode corrosion problem and ensures the formation of a Schottky potential barrier. On the other hand, the inclusion of DPP-CNTVT layer can passivate the defects within the perovskite layer and facilitate charge generation and extraction. With all these advantages, the resulting flexible SEG devices exhibit remarkable power density up to 18.22 μW cm^–2 under half-in-shadow conditions, which can light up 7 light-emitting diodes and a calculator. To the best of our knowledge, this is the first successful demonstration of perovskite SEG devices, and the power density achieved herein even outperforms that of state-of-the-art silicon-based SEG measured under the same condition. Additionally, through the use of UV-cured epoxy/fluorinated polymer poly(perfluoro(1-butenyl vinyl ether) (CYTOP) bilayer film as the encapsulation layer, long-term stable SEG devices can be realized. Importantly, our strategy has shown great promise for extending the applicability of SEG to flexible semitransparent power sources and self-powered photodetectors. This work provides important guidelines for the exploitation of high-performance and stable perovskite SEG through interface engineering, which sets a new milestone in this field and presents a significant step toward the practical applications of this emerging technology.

更新日期：2023-07-25

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南