通过阳离子交换在CdS纳米线上的磁性MoS <sub>2</sub>界面单层,The Journal of Physical Chemistry C

当前位置： X-MOL 学术 › J. Phys. Chem. C › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

通过阳离子交换在CdS纳米线上的磁性MoS ₂界面单层
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2016-10-03 00:00:00 , DOI: 10.1021/acs.jpcc.6b07679
Chih-Shan Tan,Yu-Jung Lu,Chun-Chi Chen,Pei-Hsuan Liu,Shangjr Gwo,Guang-Yu Guo,Lih-Juann Chen

MoS ₂原子层由于具有二维结构以及可用于下一代电子和光电设备的可调光学，电学和机械性能，因此最近引起了人们的极大兴趣。在这里，我们通过在室温下在溶液中进行阳离子交换，在CdS纳米线上轻松制造了MoS ₂薄膜，并重要地观察了它们的非凡磁性。我们通过拍摄MoS _2的原子图像来建立MoS ₂ / CdS异质结构的原子结构/ CdS接口，以及执行第一性原理密度函数几何优化和扫描透射电子显微镜环形暗场图像模拟。此外，我们对MoS ₂ / CdS异质结构的第一原理密度泛函计算表明，MoS ₂ / CdS异质结构中的磁性来自于邻近MoS ₂ / CdS界面的铁磁MoS ₂单层。铁磁性归因于MoS ₂单层间Mo d _x_²_–_y_² / d _xy导带在MoS ₂单层界面中的部分占据，这是由于MoS ₂之间的混合共价离子键引起的MoS ₂ / CdS界面附近的CdS和CdS单层。在MoS ₂ /半导体界面处具有大自旋极化的铁磁MoS ₂单层的这些发现，为在自旋电子器件中应用的过渡金属二卤化硅基磁性半导体多层制造提供了一条新途径。

"点击查看英文标题和摘要"

Magnetic MoS2 Interface Monolayer on a CdS Nanowire by Cation Exchange

MoS₂ atomic layers have recently attracted much interest because of their two-dimensional structure as well as tunable optical, electrical, and mechanical properties for next-generation electronic and electro-optical devices. Here we have achieved facile fabrication of MoS₂ thin films on CdS nanowires by cation exchange in solution at room temperature and importantly observed their extraordinary magnetic properties. We establish the atomic structure of the MoS₂/CdS heterostructure by taking atomic images of the MoS₂/CdS interface as well as performing first-principles density functional geometry optimizations and scanning transmission electron microscopy annular dark field image simulations. Furthermore, our first-principles density functional calculations for the MoS₂/CdS heterostructure reveal that the magnetism in the MoS₂/CdS heterostructure stems from the ferromagnetic MoS₂ monolayer next to the MoS₂/CdS interface. The ferromagnetism is attributed to the partial occupation of the Mo d_x²–y²/d_xy conduction band in the interfacial MoS₂ monolayer caused by the mixed covalent–ionic bonding among the MoS₂ and CdS monolayers near the MoS₂/CdS interface. These findings of the ferromagnetic MoS₂ monolayer with large spin polarization at the MoS₂/semiconductor interface suggest a new route for fabrication of the transition metal dichalcogenide-based magnetic semiconductor multilayers for applications in spintronic devices.

更新日期：2016-10-03

点击分享查看原文

点击收藏

公开下载

阅读更多本刊新发论文本刊介绍/投稿指南