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SnF2-Doped Cs2SnI6 Ordered Vacancy Double Perovskite for Photovoltaic Applications
Solar RRL ( IF 6.0 ) Pub Date : 2023-07-22 , DOI: 10.1002/solr.202300165
Rubaiya Murshed 1 , Sarah Thornton 1 , Curtis Walkons 1 , Jung Jae Koh 2 , Shubhra Bansal 1, 3
Affiliation  

Air-stable p-type SnF2:Cs2SnI6 with a bandgap of 1.6 eV has been demonstrated as a promising material for Pb-free halide perovskite solar cells. Crystalline Cs2SnI6 phase is obtained with CsI, SnI2, and SnF2 salts in gamma-butyrolactone solvent, but not with dimethyl sulfoxide and N,N-dimethylformamide solvents. Cs2SnI6 is found to be stable for at least 1000 h at 100 °C when dark annealed in nitrogen atmosphere. In this study, Cs2SnI6 has been used in a superstrate n–i–p planar device structure enabled by a spin-coated absorber thickness of ≈2 μm on a chemical bath deposited Zn(O,S) electron transport layer. The best device power conversion efficiency reported here is 5.18% with VOC of 0.81 V, 9.28 mA cm−2 JSC, and 68% fill factor. The dark saturation current and diode ideality factor are estimated as 1.5 × 10−3 mA cm−2 and 2.18, respectively. The devices exhibit a high VOC deficit and low short-circuit current density due to high bulk and interface recombination. Device efficiency can be expected to increase with improvement in material and interface quality, charge transport, and device engineering.

中文翻译:

用于光伏应用的 SnF2 掺杂 Cs2SnI6 有序空位双钙钛矿

带隙为1.6 eV的空气稳定p型SnF 2 :Cs 2 SnI 6已被证明是一种有前景的无铅卤化物钙钛矿太阳能电池材料。结晶Cs 2 SnI 6相是用CsI、SnI 2和SnF 2盐在γ-丁内酯溶剂中获得的,但不是用二甲基亚砜和N,N-二甲基甲酰胺溶剂获得的。研究发现,当在氮气气氛中进行暗退火时, Cs 2 SnI 6在 100 °C 下可稳定至少 1000 小时。本研究中,Cs 2 SnI 6已用于超基板 n-i-p 平面器件结构,该结构通过在化学浴沉积的 Zn(O,S) 电子传输层上旋涂厚度约 2 μm 的吸收体实现。这里报道的最佳器件功率转换效率为 5.18%,VOC0.81 V、9.28 mA cm -2 J SC和 68% 填充因子。暗饱和电流和二极管理想因子估计分别为1.5 × 10 -3  mA cm -2和2.18。该器件表现出高V OC 由于高体积和界面复合而导致缺陷和低短路电流密度。随着材料和界面质量、电荷传输和器件工程的改进,器件效率有望提高。
更新日期:2023-07-22
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