基于含硫有机硼发射体的低效率滚降高性能窄带 OLED,Advanced Optical Materials

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基于含硫有机硼发射体的低效率滚降高性能窄带 OLED
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2023-07-21 , DOI: 10.1002/adom.202301084
Deli Li ₁ , Mengke Li ₁ , Denghui Liu ₁ , Jiaji Yang ₁ , Wei Li ₁ , Zhihai Yang ₁ , Haoxiang Yuan ₁ , Simin Jiang ₁ , Xiaomei Peng ₁ , Guo‐Xi Yang ₁ , Wentao Xie ₁ , Weidong Qiu ₁ , Yiyang Gan ₁ , Kunkun Liu ₁ , Shi‐Jian Su ₁

Affiliation

基于多共振 (MR) 的有机硼发射体具有高效窄带热激活延迟荧光 (TADF)，已成为构建具有高色纯度和高色域的高性能有机发光二极管 (OLED) 的关键材料组件。高色域。然而，由于相对较大的单线态-三线态分裂能、较长的激发态寿命和较慢的反向系间窜越率，大多数MR-TADF器件在高电流密度下会出现严重的效率滚降（k _RISC）。在此，通过利用硫原子稠合的供体单元，7H-苯并[4,5]噻吩并[2,3-b]咔唑，开发出能够实现高效率和低效率滚降窄带TADF发射的有机硼发射体（BTC-BNCz）。受益于硫原子的重原子效应，k_RISC高达1.6 × 10<实现了a i=9>5 s⁻¹，这可以大大减少不期望的猝灭效应。因此，使用 BTC-BNCz 作为掺杂剂的 OLED 表现出 27.0% 的高外量子效率 (EQE)，半峰全宽 (FWHM) 为 35 nm。此外，利用高水平偶极比TADF材料作为辅助主体，器件性能优异，最大EQE为35.2%，半高宽为37 nm，效率滚降缓慢。

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High-Performance Narrowband OLED with Low Efficiency Roll-Off Based on Sulfur-Incorporated Organoboron Emitter

Multi-resonance (MR) based organoboron emitters exhibiting high-efficiency narrowband thermally activated delayed fluorescence (TADF) have become a critical material component for constructing high-performance organic light-emitting diodes (OLEDs) with high color purity and high color gamut. However, most of the MR-TADF devices suffer from severe efficiency roll-off at high current density due to the relatively large singlet–triplet splitting energy, long excited state lifetime, and slow reverse intersystem crossing rate (k _RISC). Herein, by utilizing a sulfur atom-fused donor unit, 7H-benzo[4,5]thieno[2,3-b]carbazole, an organic boron emitter (BTC-BNCz) capable of high efficiency and low efficiency roll-off narrowband TADF emission is developed. Benefitting from the heavy atom effect of the sulfur atom, k_RISC up to 1.6 × 10⁵ s⁻¹ is achieved, which could greatly reduce the undesired quenching effect. Consequently, the OLED using BTC-BNCz as dopant exhibits high external quantum efficiency (EQE) of 27.0% with full width at half maximum (FWHM) of 35 nm. Moreover, by utilizing a TADF material with a high horizontal dipole ratio as assistant host, outstanding device performance is achieved with a maximum EQE of 35.2% and FWHM of 37 nm, featuring slow efficiency roll-off.

更新日期：2023-07-21

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