理想化 Tauc 图，用紫外-可见光谱准确测定半导体带隙：立方砷化硼的案例研究,The Journal of Physical Chemistry Letters

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理想化 Tauc 图，用紫外-可见光谱准确测定半导体带隙：立方砷化硼的案例研究
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2023-07-19 , DOI: 10.1021/acs.jpclett.3c01416
Hong Zhong ₁ , Fengjiao Pan ₂ , Shuai Yue _{3,

4} , Chengzhen Qin ₅ , Viktor Hadjiev ₆ , Fei Tian ₇ , Xinfeng Liu _{3,

4} , Feng Lin ₈ , Zhiming Wang ₉ , Jiming Bao _{1,

2,

5}

Affiliation

Department of Electrical and Computer Engineering and Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, Texas 77204, United States.
Department of Physics and Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, Texas 77204, United States.
CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China.
University of Chinese Academy of Sciences, Beijing 100049, China.
Materials Science & Engineering Program, University of Houston, Houston, Texas 77204, United States.
Department of Mechanical Engineering and Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, Texas 77204, United States.
School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510006, China.
National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, China.
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China.

Tauc 图广泛用于确定半导体的带隙，但实际图通常表现出低于预期带隙的显着基线吸收，导致两种不同的外推法出现带隙差异。在这项工作中，我们首先讨论基线吸收的起源，并通过模拟具有不同水平的基线吸收的 Tauc 图来表明两种外推方法都会产生显着的误差。然后，我们提出并通过实验验证了一种新方法，该方法通过在构建 Tauc 图之前去除吸收光谱的基线来理想化吸收光谱。最后，我们将这种新方法应用于立方砷化硼（c-BA），解决了其带隙差异，并根据先前和新的透射光谱获得了 1.835 eV 的收敛带隙。该方法适用于通过透射或漫反射测量吸收光谱的间接和直接带隙半导体，这对于获得其带隙的准确值至关重要。

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更新日期：2023-07-19

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