Implementation of Photosynaptic and Electrical Memory Functions in Organic Nano-Floating-Gate Transistors via a Perovskite-Nanocrystal-Based Nanocomposite Tunneling Layer,Small Science

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Implementation of Photosynaptic and Electrical Memory Functions in Organic Nano-Floating-Gate Transistors via a Perovskite-Nanocrystal-Based Nanocomposite Tunneling Layer
Small Science ( IF 11.1 ) Pub Date : 2023-07-18 , DOI: 10.1002/smsc.202300068
Byung Joon Moon _{1,

2} , Young-Seok Song ₃ , Dabin Son ₄ , Hee Yun Yang _{1,

3} , Sukang Bae _{1,

2} , Seoung-Ki Lee ₅ , Sang Hyun Lee ₄ , Tae-Wook Kim _{2,

3}

Affiliation

An organic nano-floating-gate transistor (ONFGT) with both photosynaptic and electrical memory functions is developed using a perovskite (CsPbBr₃) NC-insulating polymer (polystyrene; PS) nanocomposite and CsPbBr₃ NCs as the tunneling and floating gate layers, respectively. The introduction of the CsPbBr₃ NCs–PS nanocomposite layer improves the photoresponsivity of the ONFGT under ultraviolet–visible irradiation, resulting in an increase in both the photocurrent and the light-to-dark current ratio by 10⁻⁸ A and 10⁴ orders of magnitude, respectively. It also exhibits high responsivity (0.804 A W⁻¹) and external quantum efficiency (249.3%) under 400 nm irradiation. Furthermore, the photosynaptic characteristics of the ONFGT under visible-light irradiation are investigated. To mimic biological nervous systems, the photocurrent of the device is dynamically modulated by varying the light intensity and duration. Notably, an increase in synaptic weight is observed under repeated photonic stimulations, as shown by changes in synaptic weight with each light pulse. Also, the ONFGT exhibits excellent nonvolatile memory characteristics in the dark, displaying a hysteresis window value of 2.9 V for a gate double sweep under ±5.0 V. Consequently, the perovskite NCs–insulating polymer nanocomposite tunneling layer is crucial for enabling photoresponsivity and memory characteristics in nano-floating-gate transistors, making them suitable for multifunctional electronic devices.

中文翻译：

通过基于钙钛矿纳米晶体的纳米复合隧道层实现有机纳米浮栅晶体管的光突触和电记忆功能

采用钙钛矿（CsPbBr ₃）NC绝缘聚合物（聚苯乙烯；PS）纳米复合材料和CsPbBr ₃ NC作为隧道层和浮栅层，开发了一种具有光突触和电记忆功能的有机纳米浮栅晶体管（ONFGT）。_{CsPbBr 3} NCs-PS纳米复合层的引入提高了ONFGT在紫外-可见光照射下的光响应性，导致光电流和明暗电流比增加了10 -8 A和10 ⁴ 数量^级。分别为大小。它还表现出高响应度（0.804 A W ⁻¹）和400 nm照射下的外量子效率（249.3%）。此外，还研究了可见光照射下ONFGT的光突触特性。为了模拟生物神经系统，通过改变光强度和持续时间来动态调节设备的光电流。值得注意的是，在重复光子刺激下观察到突触重量增加，如每个光脉冲突触重量的变化所示。此外，ONFGT 在黑暗中表现出优异的非易失性存储特性，在 ±5.0 V 下栅极双扫描显示出 2.9 V 的滞后窗口值。因此，钙钛矿 NCs-绝缘聚合物纳米复合隧道层对于实现光响应性和存储特性至关重要在纳米浮栅晶体管中，

更新日期：2023-07-18

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