当前位置：
X-MOL 学术
›
Small Methods
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Interfacial Disordering and Heterojunction Enabling Fast Proton Conduction
Small Methods ( IF 10.7 ) Pub Date : 2023-07-19 , DOI: 10.1002/smtd.202300450 Muhammad Yousaf 1 , Yuzheng Lu 2 , Enyi Hu 1 , Muhammad Akbar 3 , Muhammad Ali Kamran Yousaf Shah 1 , Asma Noor 4 , Majid Niaz Akhtar 5 , Naveed Mushtaq 1 , Senlin Yan 2 , Chen Xia 3, 6 , Bin Zhu 1, 7
Small Methods ( IF 10.7 ) Pub Date : 2023-07-19 , DOI: 10.1002/smtd.202300450 Muhammad Yousaf 1 , Yuzheng Lu 2 , Enyi Hu 1 , Muhammad Akbar 3 , Muhammad Ali Kamran Yousaf Shah 1 , Asma Noor 4 , Majid Niaz Akhtar 5 , Naveed Mushtaq 1 , Senlin Yan 2 , Chen Xia 3, 6 , Bin Zhu 1, 7
Affiliation
|
The interfacial disorder is a general method to change the metal-oxygen compatibility and carrier density of heterostructure materials for ionic transport modulation. Herein, to enable high proton conduction, a semiconductor heterostructure based on spinel ZnFe2O4 (ZFO) and fluorite CeO2 is developed and investigated in terms of structural characterization, first principle calculation, and electrochemical performance. Particular attention is paid to the interfacial disordering and heterojunction effects of the material. Results show that the heterostructure induces a disordered oxygen region at the hetero-interface of ZFO-CeO2 by dislocating oxygen atoms, leading to fast proton transport. As a result, the ZFO-CeO2 exhibits a high proton conductivity of 0.21 S cm−1 and promising fuel cell power output of 1070 mW cm−2 at 510 °C. Based upon these findings, a new mechanism is proposed by focusing on the change of O–O bond length to interpret the diffusion and acceleration of protons in ZFO-CeO2 on the basis of the Grotthuss mechanism. This study provides a new strategy to customize semiconductor heterostructure to enable fast proton conduction.
中文翻译：
界面无序和异质结实现快速质子传导
界面紊乱是改变异质结构材料的金属-氧相容性和载流子密度以进行离子输运调制的通用方法。在此，为了实现高质子传导，开发了一种基于尖晶石ZnFe 2 O 4 (ZFO)和萤石CeO 2的半导体异质结构，并在结构表征、第一原理计算和电化学性能方面进行了研究。特别关注材料的界面无序和异质结效应。结果表明，异质结构通过氧原子位错在ZFO-CeO 2异质界面处引入无序氧区域，从而导致快速质子传输。因此，ZFO-CeO 2表现出0.21 S cm -1的高质子电导率，并在510 °C下具有1070 mW cm -2的燃料电池功率输出。基于这些发现，在Grotthuss机制的基础上，提出了一种新的机制，通过关注O-O键长的变化来解释ZFO-CeO 2中质子的扩散和加速。这项研究提供了一种定制半导体异质结构以实现快速质子传导的新策略。
更新日期：2023-07-19
中文翻译：
界面无序和异质结实现快速质子传导
界面紊乱是改变异质结构材料的金属-氧相容性和载流子密度以进行离子输运调制的通用方法。在此，为了实现高质子传导，开发了一种基于尖晶石ZnFe 2 O 4 (ZFO)和萤石CeO 2的半导体异质结构，并在结构表征、第一原理计算和电化学性能方面进行了研究。特别关注材料的界面无序和异质结效应。结果表明，异质结构通过氧原子位错在ZFO-CeO 2异质界面处引入无序氧区域，从而导致快速质子传输。因此，ZFO-CeO 2表现出0.21 S cm -1的高质子电导率，并在510 °C下具有1070 mW cm -2的燃料电池功率输出。基于这些发现，在Grotthuss机制的基础上，提出了一种新的机制，通过关注O-O键长的变化来解释ZFO-CeO 2中质子的扩散和加速。这项研究提供了一种定制半导体异质结构以实现快速质子传导的新策略。
京公网安备 11010802027423号