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Efficient and ultra-broadband Cr3+/Ni2+ co-doped phosphors for light-emitting diodes with spectral output over NIR-I and NIR-II regions
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2023-07-19 , DOI: 10.1039/d3tc02051g Qianyi Jia 1 , Leqi Yao 2 , Shijie Yu 1 , Shuxuan Gong 1 , Jianqing Jiang 3 , Qiyue Shao 1
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2023-07-19 , DOI: 10.1039/d3tc02051g Qianyi Jia 1 , Leqi Yao 2 , Shijie Yu 1 , Shuxuan Gong 1 , Jianqing Jiang 3 , Qiyue Shao 1
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Near-infrared (NIR) phosphor-converted light-emitting diode (pc-LED) technology has attracted intense attention in building next-generation broadband NIR light sources. Simultaneous achievements of ultra-broadband emission and high luminescence efficiency remain a great challenge for the exploration of NIR-emitting phosphors. Herein, an ultrabroad NIR-emitting Cr3+/Ni2+ codoped MgGa2(O,F)4 (MGOF:Cr3+,Ni2+) phosphor is developed with high quantum efficiency. The site occupation of Ni2+, the energy transfer from Cr3+ to Ni2+, and the influences of Cr3+ and Ni2+ contents on photoluminescent properties are investigated. The MGOF:Cr3+,Ni2+ phosphor exhibits an ultrabroad NIR emission from 700 to 1500 nm upon blue light excitation, which arises from the co-luminescence of Cr3+ and Ni2+. A high internal quantum efficiency of 83.3% and good thermal stability (74.2%@100 °C) are also achieved. The pc-LED fabricated with the MGOF:Cr3+,Ni2+ phosphor can generate ultrabroad spectral output of NIR light, simultaneously showing a NIR output power of ∼35.5 mW and an energy conversion efficiency of ∼11.9% at 100 mA drive current. Finally, the application of the as-fabricated NIR pc-LED for plastic sorting is also demonstrated. The study provides new clues for the exploration of efficient and ultrabroad NIR luminescence materials.
中文翻译：
用于发光二极管的高效超宽带 Cr3+/Ni2+ 共掺杂荧光粉，在 NIR-I 和 NIR-II 区域具有光谱输出
近红外 (NIR) 荧光粉转换发光二极管 (pc-LED) 技术在构建下一代宽带近红外光源方面引起了人们的强烈关注。同时实现超宽带发射和高发光效率仍然是近红外荧光粉探索的巨大挑战。本文开发了一种具有高量子效率的超宽近红外发射Cr 3+ /Ni 2+共掺杂MgGa 2 (O,F) 4 (MGOF:Cr 3+ ,Ni 2+ )荧光粉。Ni 2+的位点占据、Cr 3+到 Ni 2+的能量转移以及 Cr 3+和 Ni 2+的影响研究了含量对光致发光性能的影响。MGOF:Cr 3+ ,Ni 2+荧光粉在蓝光激发下表现出700至1500 nm的超宽近红外发射，这是由Cr 3+和Ni 2+的共发光产生的。还实现了 83.3% 的高内量子效率和良好的热稳定性 (74.2%@100 °C)。MGOF:Cr 3+ ,Ni 2+制作的pc-LED荧光粉可以产生近红外光的超宽光谱输出，同时在 100 mA 驱动电流下显示出~35.5 mW 的近红外输出功率和~11.9% 的能量转换效率。最后，还演示了已制成的 NIR pc-LED 在塑料分选中的应用。该研究为探索高效、超宽近红外发光材料提供了新线索。
更新日期：2023-07-19
中文翻译：
用于发光二极管的高效超宽带 Cr3+/Ni2+ 共掺杂荧光粉，在 NIR-I 和 NIR-II 区域具有光谱输出
近红外 (NIR) 荧光粉转换发光二极管 (pc-LED) 技术在构建下一代宽带近红外光源方面引起了人们的强烈关注。同时实现超宽带发射和高发光效率仍然是近红外荧光粉探索的巨大挑战。本文开发了一种具有高量子效率的超宽近红外发射Cr 3+ /Ni 2+共掺杂MgGa 2 (O,F) 4 (MGOF:Cr 3+ ,Ni 2+ )荧光粉。Ni 2+的位点占据、Cr 3+到 Ni 2+的能量转移以及 Cr 3+和 Ni 2+的影响研究了含量对光致发光性能的影响。MGOF:Cr 3+ ,Ni 2+荧光粉在蓝光激发下表现出700至1500 nm的超宽近红外发射，这是由Cr 3+和Ni 2+的共发光产生的。还实现了 83.3% 的高内量子效率和良好的热稳定性 (74.2%@100 °C)。MGOF:Cr 3+ ,Ni 2+制作的pc-LED荧光粉可以产生近红外光的超宽光谱输出，同时在 100 mA 驱动电流下显示出~35.5 mW 的近红外输出功率和~11.9% 的能量转换效率。最后，还演示了已制成的 NIR pc-LED 在塑料分选中的应用。该研究为探索高效、超宽近红外发光材料提供了新线索。
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