Polymer dielectrics with synergistically large dielectric permittivity (ε') and breakdown strength (E_b) but prohibited loss is of crucial applications in the electronic devices and power equipment. In this study, we aim to elevate the integrated dielectric performances of molybdenum (Mo)/polyvinylidene fluoride (PVDF) by constructing a semiconducting molybdenum oxide (MoO₃) shell and insulating polystyrene (PS) shell on the Mo surface through high-temperature oxidation followed by suspension polymerization. The resulting core@double-shell Mo@MoO₃@PS particles were compounded with PVDF to achieve high ε' and E_b while minimizing the loss. The results reveal that the Mo@MoO₃@PS/PVDF composites indicate simultaneously ameliorative ε' and E_b along with restrained loss owing to the existence of the MoO₃@PS double-shell, which not only prominently enhances the interfacial compatibility and interactions between fillers and PVDF, but significantly inhibits the conductivity and loss through impeding the long-distance motion of carrier charges. The dielectric capabilities could be improved by adjusting the thickness of the PS interlayer. The Havriliak-Negami equation was used to fit the experimental results, which showed the impact of the PS shell on the polarization mechanism and how it inhibits carrier migration. The Mo@MoO₃@PS/PVDF with high ε' and E_b yet exceptionally low loss exhibit potential applications in microelectronics and electrical industries.

中文翻译：

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核@双壳Mo@MoO3@PS/PVDF复合材料的界面洞察力显着改善介电性能

聚合物电介质具有协同大的介电常数（ε'）和击穿强度（Eb _）但损耗被抑制，在电子器件和电力设备中具有重要的应用。在本研究中，我们的目标是通过高温氧化在Mo表面构建半导体氧化钼（MoO ₃）壳和绝缘聚苯乙烯（PS）壳，以提高钼（Mo）/聚偏氟乙烯（PVDF）的综合介电性能然后进行悬浮聚合。所得核@双壳Mo@MoO ₃ @PS颗粒与PVDF复合以获得高ε'和E _b同时最大限度地减少损失。结果表明，由于MoO ₃ @PS双壳层的存在，Mo@MoO 3 @PS/PVDF复合材料同时表现出改善的ε'和E b 以及抑制的损失，这不仅显着_增强了界面相容性_和相互作用介于填料和PVDF之间，但通过阻碍载流子电荷的长距离运动而显着抑制电导率和损耗。通过调整PS中间层的厚度可以提高介电性能。使用Havriliak-Negami方程对实验结果进行拟合，显示了PS壳对极化机制的影响以及它如何抑制载流子迁移。Mo@MoO₃ @PS/PVDF 具有高ε'和E _b但损耗极低，在微电子和电气行业具有潜在的应用前景。