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Interfacial insight of core@double-shell Mo@MoO3@PS/PVDF composites towards prominently meliorative dielectric performances
Journal of Applied Polymer Science ( IF 2.7 ) Pub Date : 2023-07-14 , DOI: 10.1002/app.54438 Fang Wang 1 , Wenying Zhou 1 , Xiaolong Chen 1 , Fanrong Kong 1 , Shuangquan Lin 2 , Yating Yang 1 , Jiangtao Cai 1 , Huiwu Cai 1
Journal of Applied Polymer Science ( IF 2.7 ) Pub Date : 2023-07-14 , DOI: 10.1002/app.54438 Fang Wang 1 , Wenying Zhou 1 , Xiaolong Chen 1 , Fanrong Kong 1 , Shuangquan Lin 2 , Yating Yang 1 , Jiangtao Cai 1 , Huiwu Cai 1
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Polymer dielectrics with synergistically large dielectric permittivity (ε') and breakdown strength (Eb) but prohibited loss is of crucial applications in the electronic devices and power equipment. In this study, we aim to elevate the integrated dielectric performances of molybdenum (Mo)/polyvinylidene fluoride (PVDF) by constructing a semiconducting molybdenum oxide (MoO3) shell and insulating polystyrene (PS) shell on the Mo surface through high-temperature oxidation followed by suspension polymerization. The resulting core@double-shell Mo@MoO3@PS particles were compounded with PVDF to achieve high ε' and Eb while minimizing the loss. The results reveal that the Mo@MoO3@PS/PVDF composites indicate simultaneously ameliorative ε' and Eb along with restrained loss owing to the existence of the MoO3@PS double-shell, which not only prominently enhances the interfacial compatibility and interactions between fillers and PVDF, but significantly inhibits the conductivity and loss through impeding the long-distance motion of carrier charges. The dielectric capabilities could be improved by adjusting the thickness of the PS interlayer. The Havriliak-Negami equation was used to fit the experimental results, which showed the impact of the PS shell on the polarization mechanism and how it inhibits carrier migration. The Mo@MoO3@PS/PVDF with high ε' and Eb yet exceptionally low loss exhibit potential applications in microelectronics and electrical industries.
中文翻译：
核@双壳Mo@MoO3@PS/PVDF复合材料的界面洞察力显着改善介电性能
聚合物电介质具有协同大的介电常数（ε'）和击穿强度（Eb ）但损耗被抑制，在电子器件和电力设备中具有重要的应用。在本研究中，我们的目标是通过高温氧化在Mo表面构建半导体氧化钼（MoO 3）壳和绝缘聚苯乙烯（PS）壳，以提高钼（Mo）/聚偏氟乙烯（PVDF）的综合介电性能然后进行悬浮聚合。所得核@双壳Mo@MoO 3 @PS颗粒与PVDF复合以获得高ε'和E b同时最大限度地减少损失。结果表明，由于MoO 3 @PS双壳层的存在，Mo@MoO 3 @PS/PVDF复合材料同时表现出改善的ε'和E b 以及抑制的损失，这不仅显着增强了界面相容性和相互作用介于填料和PVDF之间，但通过阻碍载流子电荷的长距离运动而显着抑制电导率和损耗。通过调整PS中间层的厚度可以提高介电性能。使用Havriliak-Negami方程对实验结果进行拟合，显示了PS壳对极化机制的影响以及它如何抑制载流子迁移。Mo@MoO3 @PS/PVDF 具有高ε'和E b但损耗极低，在微电子和电气行业具有潜在的应用前景。
更新日期：2023-07-14
中文翻译：
核@双壳Mo@MoO3@PS/PVDF复合材料的界面洞察力显着改善介电性能
聚合物电介质具有协同大的介电常数（ε'）和击穿强度（Eb ）但损耗被抑制，在电子器件和电力设备中具有重要的应用。在本研究中，我们的目标是通过高温氧化在Mo表面构建半导体氧化钼（MoO 3）壳和绝缘聚苯乙烯（PS）壳，以提高钼（Mo）/聚偏氟乙烯（PVDF）的综合介电性能然后进行悬浮聚合。所得核@双壳Mo@MoO 3 @PS颗粒与PVDF复合以获得高ε'和E b同时最大限度地减少损失。结果表明，由于MoO 3 @PS双壳层的存在，Mo@MoO 3 @PS/PVDF复合材料同时表现出改善的ε'和E b 以及抑制的损失，这不仅显着增强了界面相容性和相互作用介于填料和PVDF之间，但通过阻碍载流子电荷的长距离运动而显着抑制电导率和损耗。通过调整PS中间层的厚度可以提高介电性能。使用Havriliak-Negami方程对实验结果进行拟合，显示了PS壳对极化机制的影响以及它如何抑制载流子迁移。Mo@MoO3 @PS/PVDF 具有高ε'和E b但损耗极低，在微电子和电气行业具有潜在的应用前景。
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