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Tin Doping Induced High-Performance Solution-Processed Ga2O3 Photosensor toward Neuromorphic Visual System
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2023-07-10 , DOI: 10.1002/adfm.202303584 Peng Li 1 , Xuanyu Shan 1 , Ya Lin 1 , Xiangjing Meng 1 , Jiangang Ma 1 , Zhongqiang Wang 1 , Xiaoning Zhao 1 , Bingsheng Li 1 , Weizhen Liu 1 , Haiyang Xu 1 , Yichun Liu 1
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2023-07-10 , DOI: 10.1002/adfm.202303584 Peng Li 1 , Xuanyu Shan 1 , Ya Lin 1 , Xiangjing Meng 1 , Jiangang Ma 1 , Zhongqiang Wang 1 , Xiaoning Zhao 1 , Bingsheng Li 1 , Weizhen Liu 1 , Haiyang Xu 1 , Yichun Liu 1
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Ga2O3 is an emerging wide-bandgap semiconductor with high deep ultraviolet absorption, tunable persistent photoconductivity, and excellent stability toward electric fields, making it a promising component for neuromorphic visual systems (NVSs). However, Ga2O3-based photosensors with high responsivity and long response decay times are required for efficient NVSs. A solution-processed doping strategy for fabrication of Ga2O3 is proposed with tin foil as a dopant source. Tin-doped Ga2O3 (Ga2O3:Sn) photosensors are obtained with ultrahigh responsivity and extremely long response decay times. These behaviors are attributed to substitutional tin and oxygen vacancies that modulate defect-related hole trapping. High-performance Ga2O3:Sn photosensors can mimic photonic synaptic behaviors and image pre-processing functions. NVSs based on a Ga2O3:Sn photonic synapse array perform pattern recognition with an accuracy of 97.3% under an unprecedented low-light pulse stimuli of 0.5 µW cm−2. This work provides a low-cost solution-processed approach to ultrasensitive Ga2O3:Sn NVSs and will facilitate developments in artificial intelligence technology.
中文翻译：
锡掺杂诱导的高性能溶液处理 Ga2O3 光电传感器面向神经形态视觉系统
Ga 2 O 3是一种新兴的宽带隙半导体，具有高深紫外吸收、可调的持久光电导性和优异的电场稳定性，使其成为神经形态视觉系统（NVS）的有前途的组件。然而，高效的NVS需要具有高响应率和长响应衰减时间的基于Ga 2 O 3的光传感器。提出了一种以锡箔作为掺杂源的溶液处理掺杂策略来制备Ga 2 O 3 。锡掺杂的Ga 2 O 3 (Ga 2 O 3 :Sn)光传感器具有超高响应率和极长的响应衰减时间。这些行为归因于替代性锡和氧空位调节与缺陷相关的空穴捕获。高性能Ga 2 O 3 :Sn光电传感器可以模拟光子突触行为和图像预处理功能。基于Ga 2 O 3 :Sn光子突触阵列的NVS在0.5 µW cm -2的前所未有的低光脉冲刺激下进行模式识别，准确率高达97.3% 。这项工作为超灵敏Ga 2 O 3 :Sn NVS提供了一种低成本的解决方案处理方法，并将促进人工智能技术的发展。
更新日期：2023-07-10
中文翻译：
锡掺杂诱导的高性能溶液处理 Ga2O3 光电传感器面向神经形态视觉系统
Ga 2 O 3是一种新兴的宽带隙半导体，具有高深紫外吸收、可调的持久光电导性和优异的电场稳定性，使其成为神经形态视觉系统（NVS）的有前途的组件。然而，高效的NVS需要具有高响应率和长响应衰减时间的基于Ga 2 O 3的光传感器。提出了一种以锡箔作为掺杂源的溶液处理掺杂策略来制备Ga 2 O 3 。锡掺杂的Ga 2 O 3 (Ga 2 O 3 :Sn)光传感器具有超高响应率和极长的响应衰减时间。这些行为归因于替代性锡和氧空位调节与缺陷相关的空穴捕获。高性能Ga 2 O 3 :Sn光电传感器可以模拟光子突触行为和图像预处理功能。基于Ga 2 O 3 :Sn光子突触阵列的NVS在0.5 µW cm -2的前所未有的低光脉冲刺激下进行模式识别，准确率高达97.3% 。这项工作为超灵敏Ga 2 O 3 :Sn NVS提供了一种低成本的解决方案处理方法，并将促进人工智能技术的发展。
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