We attempt to grow perovskite CaTiS₃ by pulsed laser deposition (PLD) on various substrates using a CaS:TiS₂ target. Using Al₂O₃ (0001) substrates at 600 °C deposition temperature in vacuum, Ca_1.0Ti_1.05S_2.48O_y stoichiometry is measured by Energy-dispersive X-ray spectroscopy (EDS) and Ca_1.0Ti_1.0S_2.0O_0.7 by Rutherford Backscattering Spectrometry (RBS). This indicates that when the films are grown in vacuum at moderate temperature, a high amount of S can be transferred from the target to the film. While no phase segregation of CaS and TiS₂ could be observed, no perovskite CaTiS₃ phase could be obtained, but rather a phase governed by van der Waals interactions. The films show a highly doped n-type semiconductor behavior with absorption coefficient in the 10⁵ cm⁻¹ range at 350–2500 nm but no surface photovoltage signal. This work should stimulate further experimental efforts in PLD growth of chalcogenides and chalcogenide perovskites.

_{我们尝试使用 CaS:TiS 2靶材}通过脉冲激光沉积 (PLD) 在各种基底上生长钙钛矿 CaTiS ₃。使用 Al ₂ O ₃ (0001) 基材，在真空中沉积温度为 600 °C，通过能量色散 X 射线光谱 (EDS) 和 Ca _1.0 Ti _1.0 S _2.0 O _{0.7测量 Ca 1.0} Ti _1.05 S _2.48 O _{y化学计量。}通过卢瑟福背散射光谱法 (RBS) 进行。这表明当薄膜在中等温度的真空中生长时，大量的S可以从靶材转移到薄膜上。虽然没有观察到CaS和TiS ₂的相分离，但没有获得钙钛矿CaTiS ₃相，而是由范德华相互作用控制的相。这些薄膜表现出高掺杂的n型半导体行为，在350-2500 nm处吸收系数在10 ⁵ cm ^-1范围内，但没有表面光电压信号。这项工作应该会激发硫族化物和硫族化物钙钛矿 PLD 生长的进一步实验工作。