The influences of 90 keV H⁺、O⁺ and 1 MeV electron irradiation on the morphology, structure, defect and optoelectronic properties of unintentionally doped (UID), resistive β-Ga₂O₃ bulk crystals are investigated. Results found that H⁺ irradiation slightly reduced the blue luminescence (BL), due to the deactivation of V_Ga acceptors by forming V_Ga-xH complex. Electron irradiation remarkably boosted the BL peak while O⁺ irradiation shows an opposite effect. It is noteworthy that the defect with g= 1.998 electron spin resonance (ESR) signal was observed in O⁺ irradiated β-Ga₂O₃ for the first time, also as evidenced from the change of the appearance from transparent to grayish. Interestingly, contrary to the decrease of the g= 1.96 spin in H⁺- and electron- irradiated samples, the g= 1.96 shallow donor resonance experienced surprising enhancement after O⁺ irradiation, due to the creation of abundant V_Ga which facilitated the formation of Si_Ga defects and/or the Si_Ga-O_i complex.

研究了90 keV H ⁺、O ⁺和1 MeV电子辐照对无意掺杂(UID)电阻型β-Ga ₂ O ₃块状晶体的形貌、结构、缺陷和光电性能的影响。结果发现，H ⁺照射略微降低了蓝色发光（BL），这是由于 V _Ga受体通过形成 V _Ga -xH 络合物而失活。电子照射显着增强了 BL 峰，而 O ⁺照射则显示出相反的效果。值得注意的是，在O ⁺照射的β-Ga _{2中观察到g= 1.998电子自旋共振（ESR）信号的缺陷}O ₃首次出现，从外观从透明到灰色的变化也可以证明。^{有趣的是，与 H +} - 和电子辐照样品中 g= 1.96 自旋的减少相反，g= 1.96 浅施主共振在 O ⁺辐照后经历了令人惊讶的增强，这是由于产生了丰富的 V _Ga促进了形成Si _Ga缺陷和/或Si _Ga -O _i络合物。