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Understanding the Relationship Between Stress Change and Electrochemical Performance of a Heated SiO Anode Through In Situ Raman Spectrum
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2023-07-07 , DOI: 10.1021/acs.jpcc.3c03556 Haoyu Li 1 , Haodong Li 1 , Zhenyu Wang 1 , Qing Yang 1 , Ruoyang Wang 1 , Yizhu Lai 1 , Dong Wang 1 , Benhe Zhong 1 , Yang Song 1 , Xiaodong Guo 1, 2 , Ting Chen 1 , Zhenguo Wu 1
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2023-07-07 , DOI: 10.1021/acs.jpcc.3c03556 Haoyu Li 1 , Haodong Li 1 , Zhenyu Wang 1 , Qing Yang 1 , Ruoyang Wang 1 , Yizhu Lai 1 , Dong Wang 1 , Benhe Zhong 1 , Yang Song 1 , Xiaodong Guo 1, 2 , Ting Chen 1 , Zhenguo Wu 1
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Silicon monoxide (SiO) has drawn researchers’ attention and been widely studied due to its high capacity and excellent cyclability. Compared with pure Si anode, SiO anode exhibits lower specific capacity but better cycling stability due to its unique microstructure formed by Si and O atoms. The disproportionation reaction of SiO can be caused by heating, which can change the distribution of Si and O atoms and is commonly used as pretreatment. The electrochemical properties of SiO with different disproportionation degrees vary a lot. However, the mechanism how disproportionation affects the electrochemical properties of SiO still remains unclear. Also, crystallization takes place during heat treatment at the same time. In this study, different disproportionated SiO materials were obtained by heating raw SiO at various temperatures. The stress change caused by crystallization could hinder the lithiation process of SiO particles, and it was measured by in situ and ex situ Raman spectroscopy to propose a new perspective to illustrate the impact of disproportionation on electrochemical properties. A crystallization phenomenon of Si domains in SiO materials caused by short-wavelength laser was firstly found through ex situ Raman spectroscopy tests.
中文翻译：
通过原位拉曼光谱了解加热 SiO2 阳极的应力变化与电化学性能之间的关系
一氧化硅（SiO）由于其高容量和优异的循环性能而引起了研究人员的关注并被广泛研究。与纯硅负极相比，SiO负极由于其独特的由Si和O原子形成的微观结构，表现出较低的比容量但更好的循环稳定性。加热可引起SiO的歧化反应，可改变Si和O原子的分布，常用作预处理。不同歧化度的SiO的电化学性能差异很大。然而，歧化作用如何影响SiO的电化学性能的机制仍不清楚。此外，在热处理过程中同时发生结晶。在本研究中，通过在不同温度下加热原料 SiO 得到不同的歧化 SiO 材料。结晶引起的应力变化会阻碍SiO颗粒的锂化过程，通过原位和异位拉曼光谱测量，提出了一个新的视角来说明歧化对电化学性能的影响。通过异位拉曼光谱测试，首次发现了短波长激光引起SiO材料中Si畴的晶化现象。
更新日期：2023-07-07
中文翻译：
通过原位拉曼光谱了解加热 SiO2 阳极的应力变化与电化学性能之间的关系
一氧化硅（SiO）由于其高容量和优异的循环性能而引起了研究人员的关注并被广泛研究。与纯硅负极相比，SiO负极由于其独特的由Si和O原子形成的微观结构，表现出较低的比容量但更好的循环稳定性。加热可引起SiO的歧化反应，可改变Si和O原子的分布，常用作预处理。不同歧化度的SiO的电化学性能差异很大。然而，歧化作用如何影响SiO的电化学性能的机制仍不清楚。此外，在热处理过程中同时发生结晶。在本研究中，通过在不同温度下加热原料 SiO 得到不同的歧化 SiO 材料。结晶引起的应力变化会阻碍SiO颗粒的锂化过程，通过原位和异位拉曼光谱测量，提出了一个新的视角来说明歧化对电化学性能的影响。通过异位拉曼光谱测试，首次发现了短波长激光引起SiO材料中Si畴的晶化现象。
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