电子束辐照实现范德华异质结构的选择性生长,ACS Applied Materials & Interfaces

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电子束辐照实现范德华异质结构的选择性生长
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2023-07-07 , DOI: 10.1021/acsami.3c02892
Jakub Sitek _{1,

2} , Karolina Czerniak-Łosiewicz ₁ , Arkadiusz P Gertych ₁ , Małgorzata Giza ₁ , Paweł Dąbrowski ₃ , Maciej Rogala ₃ , Konrad Wilczyński ₁ , Anna Kaleta ₄ , Sławomir Kret ₄ , Ben R Conran ₅ , Xiaochen Wang ₅ , Clifford McAleese ₅ , Michał Macha ₆ , Aleksandra Radenović ₆ , Mariusz Zdrojek ₁ , Iwona Pasternak ₁ , Włodek Strupiński ₁

Affiliation

范德华异质结构 (vdWHS) 能够制造基于二维 (2D) 材料的复杂电子器件。理想情况下，这些 vdWHS 应该以可扩展和可重复的方式制造，并且仅在基板的特定区域中制造，以减少导致缺陷和杂质的技术操作数量。在这里，我们提出了一种通过电子束（EB）照射化学气相沉积选择性制造 vdWHS 的方法。我们区分两种生长模式：石墨烯和二硫化钨 (WS ₂ ) 基底上的正生长（二维材料在辐照区域上成核），以及石墨烯基底上的负生长（二维材料不在辐照区域上成核）。通过限制受辐照基材的空气暴露以及辐照和生长之间的时间来控制生长模式。我们进行了拉曼图谱、开尔文探针力显微镜、X射线光电子能谱和密度泛函理论建模研究来研究选择性生长机制。我们得出的结论是，选择性生长是通过三种效应的竞争来解释的：电子束诱导的缺陷、碳物质的吸附和静电相互作用。该方法是迈向工业规模制造基于二维材料的设备的关键一步。

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Selective Growth of van der Waals Heterostructures Enabled by Electron-Beam Irradiation

Van der Waals heterostructures (vdWHSs) enable the fabrication of complex electronic devices based on two-dimensional (2D) materials. Ideally, these vdWHSs should be fabricated in a scalable and repeatable way and only in the specific areas of the substrate to lower the number of technological operations inducing defects and impurities. Here, we present a method of selective fabrication of vdWHSs via chemical vapor deposition by electron-beam (EB) irradiation. We distinguish two growth modes: positive (2D materials nucleate on the irradiated regions) on graphene and tungsten disulfide (WS₂) substrates, and negative (2D materials do not nucleate on the irradiated regions) on the graphene substrate. The growth mode is controlled by limiting the air exposure of the irradiated substrate and the time between irradiation and growth. We conducted Raman mapping, Kelvin-probe force microscopy, X-ray photoelectron spectroscopy, and density-functional theory modeling studies to investigate the selective growth mechanism. We conclude that the selective growth is explained by the competition of three effects: EB-induced defects, adsorption of carbon species, and electrostatic interaction. The method here is a critical step toward the industry-scale fabrication of 2D-materials-based devices.

更新日期：2023-07-07

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