使用共焦射频磁控溅射在室温下在具有不同银层厚度的玻璃和石英基板上生长AZO/Ag/AZO多层结构。研究了 AZO/Ag/AZO 多层结构的微观结构、形态和光电特性与 Ag 厚度和基底类型的关系。掠入射 X 射线衍射 (GIXRD) 分析表明,两种基板的 AZO/Ag/AZO 结构都是多晶的,并且 ZnO (002) 和 Ag (111) 优先生长。此外,Ag层的厚度和基底的性质影响结晶度和微晶尺寸。原子力显微镜 (AFM) 研究表明,石英基底上的结构具有降低的表面粗糙度和增加的微晶尺寸,其中 Ag 厚度为 7 nm 时表面最光滑。光学测量表明,沉积在玻璃基板上的多层结构比石英上的多层结构具有更好的透射率,并且平均透射率很大程度上取决于Ag的厚度,而两种基板的光学带隙随着Ag的厚度在3.56-3.65 eV的范围内增加。所有样品的光致发光(PL)光谱显示,随着银厚度的增加,紫外线发射量减少。霍尔效应测量表明,两种基板上的 AZO/Ag/AZO 结构的电性能通过增加 Ag 厚度而得到改善。玻璃基板上的多层结构在所考虑的厚度下表现出更好的品质因数,最佳值为 1.34 × 10 所有样品的光致发光(PL)光谱显示,随着银厚度的增加,紫外线发射量减少。霍尔效应测量表明,两种基板上的 AZO/Ag/AZO 结构的电性能通过增加 Ag 厚度而得到改善。玻璃基板上的多层结构在所考虑的厚度下表现出更好的品质因数,最佳值为 1.34 × 10 所有样品的光致发光(PL)光谱显示,随着银厚度的增加,紫外线发射量减少。霍尔效应测量表明,两种基板上的 AZO/Ag/AZO 结构的电性能通过增加 Ag 厚度而得到改善。玻璃基板上的多层结构在所考虑的厚度下表现出更好的品质因数,最佳值为 1.34 × 10–3 Ω -1采用 10 nm Ag 厚度和 7.98 × 10 –5 Ω cm 的低电阻率以及 61.5% 的良好平均透射率实现。
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Ag thickness and substrate effects on microstructural and optoelectronic properties of AZO/Ag/AZO multilayer structures deposited by confocal RF magnetron sputtering
AZO/Ag/AZO multilayer structures were grown at room temperature on glass and quartz substrates with different Ag layer thicknesses using confocal RF magnetron sputtering. Microstructural, morphological and optoelectronic properties of the AZO/Ag/AZO multilayer structures were studied as a function of Ag thickness and substrate type. Grazing incidence X-ray diffraction (GIXRD) analysis shows that the AZO/Ag/AZO structures for both substrates are polycrystalline and have preferential growth of ZnO (002) and Ag (111). In addition, the thickness of the Ag layer and the nature of substrate affect crystallinity and crystallite size. Atomic force microscopy (AFM) studies show that the structures on quartz substrate have reduced surface roughness and increased crystallite size, with the smoothest surface at 7 nm Ag thickness. The optical measurements show that the multilayer structures deposited on glass substrate have better transmission than those on quartz and the average transmission strongly depends on the Ag thickness, while the optical bandgap increases with Ag thickness in the range of 3.56–3.65 eV for both substrates. The photoluminescence (PL) spectra of all samples show a decrease in UV emissions with increasing Ag thickness. Hall Effect measurements show that the electrical properties of AZO/Ag/AZO structures on both substrates are improved by increasing the Ag thickness. The multilayer structures on glass substrate demonstrate a better figure of merit for the considered thickness, with a best value of 1.34 × 10–3 Ω−1 achieved with 10 nm Ag thickness and a low resistivity of 7.98 × 10–5 Ω cm and a good average transmittance of 61.5%.