In view of the problems of difficult processing and poor toughness, bismaleimide-triazine (BT) resin was modified by the 4-(4-amino-phenoxy)phthalonitrile (4-APN). The effect of 4-APN on the curing behavior of BT resin was investigated, followed by the calculated activation energy. The possible curing mechanism of this ternary system was also proposed, with the further study of the relationship between chemical structures and properties. The results showed that 4-APN can increase the reactivity and decrease the curing temperature of BT resin. Meanwhile, due to the fact that 4-APN exerted a thermal synergistic curing effect on the BT resin, poly(BT/APN)s with a high crosslinking density exhibited the superior overall performance. Concretely, the high heat-resistance of poly(BT/APN)s was displayed, especially the glass transition temperature up to 347 ℃ of poly(BT/30APN). More intriguingly, poly(BT/APN)s with a high breakdown strength possessed better insulation properties, and the dielectric constant and loss reduced to 3 and 0.005 (1 MHz), respectively, while remaining a good stability at high temperature. Additionally, the moisture resistance and toughness of poly(BT/APN)s were also significantly improved. Based on these merits, poly(BT/APN)s can be considered as an ideal material for microelectronics.

针对双马来酰亚胺三嗪(BT)树脂加工困难、韧性差的问题，采用4-(4-氨基苯氧基)邻苯二甲腈(4-APN)对BT树脂进行改性。研究了4-APN对BT树脂固化行为的影响，并计算了活化能。随着化学结构与性能关系的进一步研究，还提出了该三元体系可能的固化机理。结果表明，4-APN可以提高BT树脂的反应活性，降低固化温度。同时，由于4-APN对BT树脂发挥热协同固化作用，高交联密度的聚(BT/APN)表现出优异的综合性能。具体而言，显示了聚(BT/APN)的高耐热性，尤其是聚(BT/30APN)的玻璃化转变温度高达347℃。更有趣的是，具有高击穿强度的聚（BT/APN）具有更好的绝缘性能，介电常数和损耗分别降至3和0.005（1 MHz），同时在高温下保持良好的稳定性。此外，聚(BT/APN)的耐湿性和韧性也显着提高。基于这些优点，聚（BT/APN）可以被认为是微电子领域的理想材料。聚(BT/APN)的耐湿性和韧性也显着提高。基于这些优点，聚（BT/APN）可以被认为是微电子领域的理想材料。聚(BT/APN)的耐湿性和韧性也显着提高。基于这些优点，聚（BT/APN）可以被认为是微电子领域的理想材料。