This study comprehensively examined the structural, dynamical, electronic, and optical characteristics of SrMoO₃ as an electrode material for the confining conducting filament in resistive random access memory (RRAM). This study is novel in that it examines the compositional control and interaction between extrinsic defects (dopants) and intrinsic defects (oxygen vacancies) acting as a transition driving force in thermodynamically stable composites for a resistive switching mechanism. In the absence of oxygen vacancies (V_os), relatively strong, confined metal-cation-based filaments formed around the dopant proved that extrinsic defects caused by substitutional dopants replacing Mo atoms are more efficient at producing low-resistance states in SrMoO₃ than intrinsic defects. Filaments of the order of a few Ås around the defect site will help to solve the uniformity and scaling problems associated with resistive switching. This finding further supported the usefulness of noise (in this case, a dopant or V_os is the source of an external or internal perturbation). The optical conductivity produced in response to incident photons in the infrared energy range also verified the suitability of doped SrMoO₃ systems for optoelectronic RRAM synaptic devices. This study's potential energy lineup-based dopant selection rule suggested that substitutional doping using the heavy transition metal Hf as an acceptor dopant yields relatively excellent results for applications involving low-power SrMoO₃-based RRAM synaptic devices.

_{这项研究全面研究了SrMoO 3}作为电阻式随机存取存储器(RRAM) 限制导电丝电极材料的结构、动力学、电子和光学特性。这项研究的新颖之处在于它研究了外在缺陷（掺杂剂）和内在缺陷（氧空位）之间的成分控制和相互作用，作为热力学稳定复合材料中电阻切换机制的过渡驱动力。在没有氧空位 (V _{o s)}的情况下，在掺杂剂周围形成相对较强的、受限的金属阳离子细丝，证明由替代掺杂剂取代 Mo 原子引起的外在缺陷在 SrMoO 3 中产生低电阻态更_有效而非内在缺陷。缺陷位置周围几埃数量级的细丝将有助于解决与电阻开关相关的均匀性和缩放问题。这一发现进一步支持了噪声的有用性（在这种情况下，掺杂剂或 V _o s 是外部或内部扰动的来源）。响应红外能量范围内的入射光子而产生的光导率_{也验证了掺杂SrMoO 3}系统对于光电RRAM突触器件的适用性。这项研究基于势能排列的掺杂剂选择规则表明，使用重过渡金属 Hf 作为受体掺杂剂的替代掺杂对于涉及低功率 SrMoO 3 的应用产生了相对优异的_结果基于 RRAM 的突触器件。