Highly Efficient Top-Emitting Quantum-Dot Light-Emitting Diodes with Record-Breaking External Quantum Efficiency of over 44.5%,Laser & Photonics Reviews

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Highly Efficient Top-Emitting Quantum-Dot Light-Emitting Diodes with Record-Breaking External Quantum Efficiency of over 44.5%
Laser & Photonics Reviews ( IF 9.8 ) Pub Date : 2023-06-27 , DOI: 10.1002/lpor.202300371
Haotao Li ₁ , Shiming Zhou ₁ , Shuming Chen ₁

Affiliation

Top-emitting (TE) quantum-dot light-emitting diodes (QLEDs) can exhibit higher light outcoupling efficiency (OCE) compared to bottom-emitting (BE) QLEDs due to the eliminated substrate mode and enhanced microcavity effect. In this study, TE QLEDs with an OCE of over 45% are realized by simultaneously optimizing the thicknesses of both indium-zinc-oxide (IZO) phase tuning layers and IZO top transparent electrodes. To reduce the resistance, the IZO top electrodes are equipped with an auxiliary metal electrode. Consequently, the red QLEDs demonstrate a high external quantum efficiency (EQE) of 38.2%. Furthermore, by applying a scattering layer on the IZO top electrode, the red QLEDs demonstrate record-breaking efficiencies of EQE 44.5%, power efficiency 92.2 lm W⁻¹, and current efficiency 93.7 cd A⁻¹. The proposed device architecture and optimization strategy contribute to a new design scheme for the preparation of highly efficient QLEDs for displays and lighting applications.

中文翻译：

高效顶发射量子点发光二极管，破纪录的外部量子效率超过 44.5%

由于消除了基板模式并增强了微腔效应，与底发射（BE）QLED 相比，顶发射（TE）量子点发光二极管（QLED）可以表现出更高的光输出耦合效率（OCE）。在这项研究中，通过同时优化氧化铟锌 (IZO) 相位调谐层和 IZO 顶部透明电极的厚度，实现了 OCE 超过 45% 的 TE QLED。为了降低电阻，IZO顶部电极配备了辅助金属电极。因此，红色 QLED 表现出高达 38.2% 的外量子效率 (EQE)。此外，通过在 IZO 顶部电极上应用散射层，红色 QLED 表现出破纪录的 EQE 44.5% 效率、功率效率 92.2 lm W ^-1和电流效率 93.7 cd A ^-1。所提出的器件架构和优化策略有助于为显示器和照明应用制备高效 QLED 提供新的设计方案。

更新日期：2023-06-27

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