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Increasing CO Binding Energy and Defects by Preserving Cu Oxidation State via O2-Plasma-Assisted N Doping on CuO Enables High C2+ Selectivity and Long-Term Stability in Electrochemical CO2 Reduction
ACS Catalysis ( IF 11.3 ) Pub Date : 2023-06-26 , DOI: 10.1021/acscatal.3c01441
Dong Gyu Park 1 , Jae Won Choi 2 , Hoje Chun 3 , Hae Sung Jang 4 , Heebin Lee 1 , Won Ho Choi 5 , Byeong Cheul Moon 6 , Keon-Han Kim 7 , Min Gyu Kim 4 , Kyung Min Choi 8 , Byungchan Han 3 , Jeung Ku Kang 1
Affiliation  

Cu is considered as the most promising catalyst for the electrochemical carbon dioxide reduction reaction (CO2RR) to produce C2+ hydrocarbons, but achieving high C2+ product selectivity and efficiency with long-term stability remains one of great challenges. Herein, we report a strategy to realize the CO2RR catalyst allowing high C2+ product selectivity and stable catalytic properties by utilizing the benefits of oxygen-plasma-assisted nitrogen doping on CuO. It is exhibited that the defects such as oxygen vacancies and grain boundaries suitable for CO2RR are generated by N2 plasma radicals on CuO. Also, the oxidation state of Cu is maintained without Cu reduction by O2 plasma. Indeed, ON–CuO synthesized through oxygen-plasma-assisted nitrogen doping is demonstrated to enable a high C2+ product selectivity of 77% (including a high C2H4 selectivity of 56%) with a high current density of −34.6 mA/cm2 at −1.1 V vs RHE, as well as a long-term stability for 22 h without performance degradation. High CO2RR performances are ascribed to the increased CO binding energy and catalytic sites in N-doped CuO. Furthermore, an in situ X-ray absorption near-edge structure analysis reveals that the defects in ON–CuO are favorable for C–C coupling leading to C2+ products.

中文翻译:

通过在 CuO 上进行 O2 等离子体辅助 N 掺杂来保留 Cu 氧化态,从而增加 CO 结合能和缺陷,从而实现电化学 CO2 还原中的高 C2+ 选择性和长期稳定性

Cu被认为是电化学二氧化碳还原反应(CO 2 RR)生产C 2+烃类最有前途的催化剂,但实现高C 2+产物选择性和效率以及长期稳定性仍然是巨大的挑战之一。在此,我们报告了一种利用氧等离子体辅助氮掺杂CuO的优点来实现CO 2 RR催化剂的策略,该催化剂具有高C 2+产物选择性和稳定的催化性能。结果表明,N 2产生了适合CO 2 RR的氧空位和晶界等缺陷。CuO 上的等离子体自由基。另外,Cu的氧化状态得以维持,而Cu未被O 2等离子体还原。事实上,通过氧等离子体辅助氮掺杂合成的ON-CuO被证明能够在-34.6 mA的高电流密度下实现77%的高C 2+产物选择性(包括56%的高C 2 H 4选择性) /cm 2 at -1.1 V vs RHE,以及22小时的长期稳定性而没有性能下降。高CO 2 RR性能归因于N掺杂CuO中增加的CO结合能和催化位点。此外,原位X射线吸收近边缘结构分析表明ON-CuO中的缺陷有利于C-C耦合,从而导致C2+ 个产品。
更新日期:2023-06-26
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