Direct Observation of Dopants Distribution and Diffusion in GaAs Planar Nanowires with Atom Probe Tomography,ACS Applied Materials & Interfaces

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Direct Observation of Dopants Distribution and Diffusion in GaAs Planar Nanowires with Atom Probe Tomography
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2016-09-27 00:00:00 , DOI: 10.1021/acsami.6b08919
Jiangtao Qu , Wonsik Choi ₁ , Parsian Katal Mohseni ₁ , Xiuling Li ₁ , Yingjie Zhang ₂ , Hansheng Chen , Simon Ringer , Rongkun Zheng

Affiliation

Intentional and unintentional doping in semiconductor nanowires undoubtedly have significant impact on the device performance. However, spatially resolved precise determination of dopant concentration is challenging due to insufficient sensitivity and resolution of conventional techniques. In this paper, quantitative 3D distribution of Si and Zn dopants in planar GaAs nanowires and their interface with AlGaAs film underneath are obtained by using a unique atom probe tomography technique, providing critical insights for the growth and potential applications of these nanowires.

中文翻译：

原子探针层析成像技术直接观察GaAs平面纳米线中掺杂物的分布和扩散

半导体纳米线中的有意和无意掺杂无疑会对器件性能产生重大影响。然而，由于常规技术的灵敏度和分辨率不足，在空间上分辨掺杂剂浓度的精确确定是具有挑战性的。在本文中，通过使用独特的原子探针层析成像技术获得了平面GaAs纳米线中Si和Zn掺杂剂的定量3D分布及其与AlGaAs膜的界面，从而为这些纳米线的生长和潜在应用提供了重要的见识。

更新日期：2016-09-27

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