Cs2SnI6 薄膜的简单溶液制备及其在固态 DSSC 中的应用,ACS Applied Materials & Interfaces

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Cs2SnI6 薄膜的简单溶液制备及其在固态 DSSC 中的应用
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2023-06-26 , DOI: 10.1021/acsami.3c04807
Dong Fang ₁ , Yanfang Tan ₁ , Yuxuan Ren ₂ , Shuchao Zheng ₂ , Fengming Xiong ₁ , Anchen Wang ₂ , Kai Chang ₁ , Baoxiu Mi ₁ , Dapeng Cao ₂ , Zhiqiang Gao ₂

Affiliation

Cs ₂ SnI ₆粉末首次通过公式CsI + SnI ₂ + I ₂ → Cs ₂ SnI ₆溶液制备。该产品纯度高，空气/热稳定。研究发现，N,N-二甲基甲酰胺（DMF）和甲醇会导致Cs ₂ SnI _{6严重劣化，在Cs}₂ SnI ₆粉末制备的薄膜中出现CsI相，而γ-丁内酯（GBL）和乙二醇溶剂则导致Cs 2 SnI 6 严重劣化。甲醚 (EGME)（薄膜-EGME）效果更好。然后，通过引入EGME溶剂，原位制备Cs ₂ SnI ₆薄膜（Film-1至Film-4）是在溶液反应下实现的，发现该反应以热动力学过程为主，即在最大试剂浓度下获得高纯度/取向的Film-4。此外，为了良好的反应，溶剂的溶解度应在所有试剂和产物之间保持平衡。研究了包含Cs ₂ SnI ₆电解质的固态染料敏化太阳能电池(ss-DSSC) 。基于溶液浇铸 Film-EGME 和原位制备 Film-4 的 ss-DSSC 的功率转换效率 (PCE) 分别为 1.81% 和 3.30%。特别地，用原位制备的Cs ₂ SnI ₆研究发现，ss-DSSC 的开路电压与其能隙态密切相关。_{当在Cs 2} SnI ₆电解质中添加添加剂时，在ss-DSSC中获得了6.14%的PCE。_{我们的工作强调了溶剂在薄膜制备中的重要性以及 Cs 2} SnI ₆间隙态在器件性能中的作用。

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Simple Solution Preparation of Cs2SnI6 Films and Their Applications in Solid-State DSSCs

Cs₂SnI₆ powder is, for the first time, solution-prepared via the formula CsI + SnI₂ + I₂ → Cs₂SnI₆. The product is highly pure and air/thermal stable. It is found that N,N-dimethylformamide (DMF) and methanol induce severe Cs₂SnI₆ deterioration with the appearance of a CsI phase in film preparation from Cs₂SnI₆ powder, while solvents of γ-butyrolactone (GBL) and ethylene glycol methyl ether (EGME) (Film-EGME) give better results. Then, by introducing EGME solvent, in situ preparation of Cs₂SnI₆ films (Film-1 to Film-4) is realized under solution reaction, which is found to be dominated by thermal dynamic process, i.e., highly pure/oriented Film-4 is obtained under the maximum reagent-concentration. Besides, for good reaction, the solubility of solvent should be balanced among all the reagents and products. Solid-state dye sensitized solar cells (ss-DSSCs) comprising a Cs₂SnI₆ electrolyte are investigated. The power conversion efficiencies (PCEs) of the ss-DSSCs based on solution-casted Film-EGME and the in situ-prepared Film-4 are 1.81% and 3.30%, respectively. Particularly, with the in situ prepared Cs₂SnI₆ films, it is found that the open circuit voltages of the ss-DSSCs are closely related to their gap states. When additive is added in Cs₂SnI₆ electrolyte, a PCE of 6.14% is obtained in an ss-DSSC. Our work highlights the importance of solvent in film preparation and the role of Cs₂SnI₆ gap states in device performance.

更新日期：2023-06-26

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