Si/SiO2 上的热蒸发 CsPbCl3 钙钛矿，具有从紫外线 (UV) 到近红外 (NIR) 的宽光谱光响应,ACS Applied Electronic Materials

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Si/SiO2 上的热蒸发 CsPbCl3 钙钛矿，具有从紫外线 (UV) 到近红外 (NIR) 的宽光谱光响应
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2023-06-23 , DOI: 10.1021/acsaelm.3c00409
Haichuan Mu ₁ , Qi Guo ₁ , Ruibin Wang ₂ , Min Qian ₁ , Jingjian Tang ₁

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通过热蒸发和75℃原位退火在Si/SiO ₂基底上制备了CsPbCl ₃金属卤化物钙钛矿光电探测器（PD），并研究了它们的光响应以及形貌、结构和光物理性质。实现了 350 至 980 nm 的宽光谱光响应，在 420、680 和 980 nm 波长 (λ) 下的最佳响应度 ( R ) 分别为 2364、3766 和 268 A/W。根据 UPS（紫外光电子能谱）和 XPS（X 射线光电子能谱）结果，这种光响应行为可归因于 CsPbCl _{3和 Si 的并行光响应。}Yb ³⁺掺杂 CsPbCl ₃_{制备了CsPbCl 3} (50 nm)/YbCl ₃ (30 nm)/CsPbCl ₃ (50 nm)光敏层结构的PD ，发现Yb ³⁺掺杂能够实现明显更短的420激子寿命。 nm，较低的陷阱密度，以及由于从 CsPbCl ₃到 Yb ^{3+的能量转移和 Yb}³⁺的缺陷钝化的综合作用而显着提高的载流子迁移率，导致具有最佳R的光响应性能显着改善（2709， 6340 和 3573A/W)，噪声等效功率 (NEP)（5.64 × 10 ^–7、2.51 × 10 ^–7和 4.38 × 10 ^–7与原始CsPbCl 3^在^λ为420、720^和^_ _ ^_ _ _{_} _分别为 980 nm。特别是在 980 nm 的 NIR λ 处，掺入Yb ^3+后R值提高了 10 倍。^{Yb 3+}的上转换处理也可以增强 Yb ³⁺掺杂的 CsPbCl _{3的广谱光响应}。我们的研究提供了一种实现宽谱钙钛矿PD的实用方法，只需通过金电极将钙钛矿连接到硅基板即可。

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Thermally Evaporated CsPbCl3 Perovskite on Si/SiO2 with Wide Spectrum Photoresponse from Ultraviolet (UV) to Near-Infrared (NIR)

CsPbCl₃ metal halide perovskite photodetectors (PDs) are prepared via thermal evaporation and 75 °C in situ annealing on Si/SiO₂ substrates, and their photoresponse as well as the morphology, structure, and photophysical properties are investigated. Wide spectrum photoresponse ranging from 350 to 980 nm has been achieved with optimal responsivity (R) of 2364, 3766, and 268 A/W at wavelengths (λ) of 420, 680, and 980 nm, respectively. Such photoresponse behavior can be attributed to the parallel photoresponse from both CsPbCl₃ and Si based on the UPS (ultraviolet photoelectron spectrometry) and XPS (X-ray photoelectron spectroscopy) results. Yb³⁺ doped CsPbCl₃ PDs with the photosensing layer structure of CsPbCl₃ (50 nm)/YbCl₃ (30 nm)/CsPbCl₃ (50 nm) have been prepared, and it was found that Yb³⁺ dopant is capable of realizing obviously shorter exciton lifetime at 420 nm, lower trap density, as well as remarkably higher carrier mobility due to the combined effects of energy transfer from CsPbCl₃ to Yb³⁺ and defect passivation from Yb³⁺, leading to remarkable improvement of the photoresponse performance with optimal R (2709, 6340 and 3573A/W), noise equivalent power (NEP) (5.64 × 10^–7, 2.51 × 10^–7, and 4.38 × 10^–7 W), and specific detectivity (D*) (1.84 × 10¹¹, 3.24 × 10¹¹, and 1.5 × 10¹¹ cm Hz^1/2 W^–1) compared to those of pristine CsPbCl₃ at λ of 420, 720, and 980 nm, respectively. Especially at the NIR λ of 980 nm, 10-fold higher R is achieved after Yb³⁺ incorporation. The upconversion processing of Yb³⁺ can also be responsible for the enhanced wide spectrum photoresponse of Yb³⁺ doped CsPbCl₃. Our study provides a practical way to realize wide spectrum perovskite PDs by simply connecting the perovskite to Si substrates by the Au electrodes.

更新日期：2023-06-23

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