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Control of Compensation Temperature in CoGd Films through Hydrogen and Oxygen Migration under Gate Voltage
Nano Letters ( IF 9.6 ) Pub Date : 2023-06-22 , DOI: 10.1021/acs.nanolett.3c00869
Xue Ren 1 , Liang Liu 1 , Bin Cui 1 , Bin Cheng 1 , Weikang Liu 1 , Taiyu An 1 , Ruiyue Chu 1 , Mingfang Zhang 1 , Tingting Miao 1 , Xiangxiang Zhao 1 , Guangjun Zhou 1 , Jifan Hu 1
Affiliation  

Electrical control of magnetic properties is crucial for low-energy memory and logic spintronic devices. We find that the magnetic properties of ferrimagnetic CoGd can be altered through ionic liquid gating. Gate voltages manipulate the opposite magnetic moments in Co and Gd sublattices and induce a giant magnetic compensation temperature change of more than 200 K in Pt/CoGd/Pt heterostructures. The electrically controlled dominant magnetic sublattice allows voltage-induced magnetization switching. Both experiments and theoretical calculations demonstrate that the significant modulations of compensation temperature are relevant to the reduced Gd moments due to the presence of hydrogen ions at positive voltages as well as the enhanced Co moments and reduced Gd moments due to the injection of oxygen ions at negative voltages. These findings expand the possibilities for all-electric and reversible magnetization control in the field of spintronics.

中文翻译:

通过栅极电压下氢和氧的迁移来控制 CoGd 薄膜中的补偿温度

磁特性的电控制对于低能存储和逻辑自旋电子器件至关重要。我们发现亚铁磁 CoGd 的磁性可以通过离子液体门控来改变。栅极电压操纵 Co 和 Gd 亚晶格中的相反磁矩,并在 Pt/CoGd/Pt 异质结构中引起超过 200 K 的巨大磁补偿温度变化。电控主磁性子晶格允许电压感应磁化强度切换。实验和理论计算均表明,补偿温度的显着调节与正电压下氢离子的存在导致的 Gd 矩降低以及负电压下氧离子注入导致的 Co 矩增强和 Gd 矩降低有关。电压。
更新日期:2023-06-22
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