As a high indium content material, resourceful recycling of waste ITO targets plays an important role in dealing with the increasing depletion of indium resources. This paper proposes to use dilute sulfuric acid to leach and recover indium under pressure. A leaching rate of indium of up to 96.50% was achieved, using 2 mol L⁻¹ sulfuric acid for 2 hours at 408 K on waste ITO targets. The leaching kinetics and behavior of indium under pressure acid leaching systems were investigated. The analysis of leaching kinetics indicated that the indium leaching process was controlled by a surface chemical reaction, and the activation energy was 41.5 kJ mol⁻¹ (>40 kJ mol⁻¹). The reaction orders of sulfuric acid concentration and particle size were 0.66 and −1.21, respectively. The analysis of the leaching residue showed that the indium tin oxide released In³⁺ into the solution under the attack of sulfuric acid and SnO₂ phase was exposed. The leaching process has the advantages of a high leaching rate, light corrosion on equipment and no waste gas generation, providing an approach for clean recycling and sustainable reuse of indium resources.

中文翻译：

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硫酸加压浸出法从废氧化铟锡 (ITO) 靶材中高效回收铟

作为高铟材料，废弃ITO靶材的资源化回收对于应对日益枯竭的铟资源具有重要作用。本文提出采用稀硫酸加压浸出回收铟。^{使用 2 mol L -1}硫酸在 408 K 下对废 ITO 靶材浸出 2 小时，实现了高达 96.50% 的铟浸出率。研究了铟在加压酸浸出系统下的浸出动力学和行为。浸出动力学分析表明，铟浸出过程受表面化学反应控制，活化能为41.5 kJ mol ^-1 (>40 kJ mol ^-1). 硫酸浓度和粒径的反应级数分别为0.66和-1.21。浸出渣分析表明，氧化铟锡在硫酸的作用下释放出In ³⁺到溶液中，暴露出SnO _2相。该浸出工艺浸出率高，对设备腐蚀小，不产生废气，为铟资源的清洁回收和可持续再利用提供了途径。